Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain(Id) @ 25°C | 220mA |
| Rds On(Max) @ Id Vgs | 4Ohm @ 400mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 0.7nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 9.5pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
The FDC6301N is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in electronic circuits. Manufactured by ON Semiconductor, it integrates two N-channel MOSFETs in a single package, optimizing space and performance. Each MOSFET in the FDC6301N can handle a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 3.5A, making it suitable for various low-voltage applications.
The device features low on-resistance, minimizing power losses and enhancing efficiency in switching applications. Its compact package, typically a SuperSOT-6, allows for high-density circuit designs, which is advantageous in portable and compact devices. The FDC6301N is commonly used in DC-DC converters, battery-powered devices, load switches, and power management systems, where its fast switching capability and low gate charge contribute to overall energy efficiency.
Overall, the FDC6301N offers reliability and performance for designers looking to implement effective power management solutions in compact and portable electronic applications.
The device features low on-resistance, minimizing power losses and enhancing efficiency in switching applications. Its compact package, typically a SuperSOT-6, allows for high-density circuit designs, which is advantageous in portable and compact devices. The FDC6301N is commonly used in DC-DC converters, battery-powered devices, load switches, and power management systems, where its fast switching capability and low gate charge contribute to overall energy efficiency.
Overall, the FDC6301N offers reliability and performance for designers looking to implement effective power management solutions in compact and portable electronic applications.
Equivalent
The FDC6301N is a dual N-channel MOSFET. Equivalent products include:
1. NXP's PMCM4401
2. Infineon's BSZ042N04LS
3. ON Semiconductor's NTD2955
4. Vishay's Si4936DDY
5. Diodes Incorporated's DMN2016UCB4
These alternatives have similar electrical characteristics and packaging, but always verify datasheets for compatibility in your specific application.
1. NXP's PMCM4401
2. Infineon's BSZ042N04LS
3. ON Semiconductor's NTD2955
4. Vishay's Si4936DDY
5. Diodes Incorporated's DMN2016UCB4
These alternatives have similar electrical characteristics and packaging, but always verify datasheets for compatibility in your specific application.
Features
The FDC6301N is a dual N-channel MOSFET produced by Fairchild Semiconductor. Key features include:
1. Dual N-Channel Configuration: Contains two N-channel MOSFETs within a single package, which is suitable for compact circuit designs.
2. Low On-Resistance: Offers low R_DS(on), which enhances efficiency by minimizing power loss and heat generation during operation.
3. High-Speed Switching: Supports fast switching speeds, making it ideal for applications requiring quick response times.
4. Compact Packaging: Available in a small SOT-23 package, which is suitable for space-constrained applications.
5. Wide Range of Applications: Commonly used in power management, load switching, and DC-DC converter applications.
6. Robust Performance: Designed to handle significant power loads while maintaining reliability and stability.
7. Protection Features: Includes built-in protection against over-voltage and over-current conditions, ensuring safe operation.
These features make the FDC6301N a versatile component for various electronic designs, particularly where space and efficiency are critical considerations.
1. Dual N-Channel Configuration: Contains two N-channel MOSFETs within a single package, which is suitable for compact circuit designs.
2. Low On-Resistance: Offers low R_DS(on), which enhances efficiency by minimizing power loss and heat generation during operation.
3. High-Speed Switching: Supports fast switching speeds, making it ideal for applications requiring quick response times.
4. Compact Packaging: Available in a small SOT-23 package, which is suitable for space-constrained applications.
5. Wide Range of Applications: Commonly used in power management, load switching, and DC-DC converter applications.
6. Robust Performance: Designed to handle significant power loads while maintaining reliability and stability.
7. Protection Features: Includes built-in protection against over-voltage and over-current conditions, ensuring safe operation.
These features make the FDC6301N a versatile component for various electronic designs, particularly where space and efficiency are critical considerations.
Pinout
The FDC6301N is a dual N-channel MOSFET with a total of 8 pins. It is designed for use in applications requiring a compact solution for load switching and power management.
Here’s a brief overview of its pin functions:
1. Pin 1 (Source 1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal for the first MOSFET.
4. Pin 4 (Drain 1): Alternate drain terminal for the first MOSFET (connected internally to pin 3).
5. Pin 5 (Drain 2): Drain terminal for the second MOSFET.
6. Pin 6 (Drain 2): Alternate drain terminal for the second MOSFET (connected internally to pin 5).
7. Pin 7 (Gate 2): Gate terminal for the second MOSFET.
8. Pin 8 (Source 2): Source terminal for the second MOSFET.
This MOSFET is typically used for low-voltage applications, leveraging its low on-resistance to efficiently switch and manage power in portable and compact electronic devices.
Here’s a brief overview of its pin functions:
1. Pin 1 (Source 1): Source terminal for the first MOSFET.
2. Pin 2 (Gate 1): Gate terminal for the first MOSFET.
3. Pin 3 (Drain 1): Drain terminal for the first MOSFET.
4. Pin 4 (Drain 1): Alternate drain terminal for the first MOSFET (connected internally to pin 3).
5. Pin 5 (Drain 2): Drain terminal for the second MOSFET.
6. Pin 6 (Drain 2): Alternate drain terminal for the second MOSFET (connected internally to pin 5).
7. Pin 7 (Gate 2): Gate terminal for the second MOSFET.
8. Pin 8 (Source 2): Source terminal for the second MOSFET.
This MOSFET is typically used for low-voltage applications, leveraging its low on-resistance to efficiently switch and manage power in portable and compact electronic devices.
Manufacturer
The FDC6301N is manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components used in various electronics and systems. The company focuses on energy-efficient solutions for applications such as automotive, industrial, cloud power, and Internet of Things (IoT). Onsemi's product portfolio includes power and signal management, logic, discrete, and custom devices that help customers solve their unique design challenges in areas like power efficiency, connectivity, and sensing.
Application
The FDC6301N, a dual N-channel MOSFET, is used in various applications due to its low on-resistance and high-speed switching. Key application areas include:
1. DC-DC Converters: Efficiently manage power in electronics by converting voltages.
2. Load Switches: Control power delivery to specific components in devices.
3. Battery Management: Enhance efficiency in charging and discharging cycles.
4. Motor Drives: Provide precise control in small motors for consumer electronics.
5. Telecom Equipment: Manage power distribution in communication devices.
6. Portable Electronics: Improve power efficiency and thermal performance.
These applications leverage the FDC6301N's compact design and performance characteristics for improved efficiency and reliability.
1. DC-DC Converters: Efficiently manage power in electronics by converting voltages.
2. Load Switches: Control power delivery to specific components in devices.
3. Battery Management: Enhance efficiency in charging and discharging cycles.
4. Motor Drives: Provide precise control in small motors for consumer electronics.
5. Telecom Equipment: Manage power distribution in communication devices.
6. Portable Electronics: Improve power efficiency and thermal performance.
These applications leverage the FDC6301N's compact design and performance characteristics for improved efficiency and reliability.
Package
The FDC6301N is a dual N-channel MOSFET, and it typically comes in a SuperSOT-6 package. This compact package type is designed for space-efficient applications, offering low on-resistance and high efficiency for power management tasks.
