Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 2.7A, 1.9A |
| Rds On(Max) @ Id Vgs | 80mOhm @ 2.7A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 4.5nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 325pF @ 10V |
| Power - Max | 700mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
FDC6327C is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by ON Semiconductor. It is commonly used in applications requiring efficient power management, such as DC-DC converters, power supply units, and motor drives. The FDC6327C features a low on-state resistance, which minimizes power loss and heat generation, making it suitable for high-efficiency applications.
Key specifications of the FDC6327C include a drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 6.3A. It also has a low gate charge, allowing for rapid switching and improved performance in high-frequency circuits. The device is housed in a small, surface-mount package, which facilitates compact PCB designs.
The FDC6327C is often favored for its reliability and performance in demanding electronic environments. Designers appreciate its balance of power handling capabilities and efficient characteristics, making it a popular choice in various consumer electronics, automotive, and industrial applications.
Key specifications of the FDC6327C include a drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 6.3A. It also has a low gate charge, allowing for rapid switching and improved performance in high-frequency circuits. The device is housed in a small, surface-mount package, which facilitates compact PCB designs.
The FDC6327C is often favored for its reliability and performance in demanding electronic environments. Designers appreciate its balance of power handling capabilities and efficient characteristics, making it a popular choice in various consumer electronics, automotive, and industrial applications.
Equivalent
The FDC6327C is a dual N-channel MOSFET commonly used in power management applications. Equivalent products can include the SI6926DQ from Vishay, NTR4171PT1G from ON Semiconductor, and DMG3415U-7 from Diodes Incorporated. These components provide similar voltage and current handling capabilities, making them suitable substitutes depending on the specific requirements of your application. Always check the datasheets to ensure compatibility with your design.
Features
The FDC6327C is a dual N-channel MOSFET designed for switching applications. Here are its key features:
1. Dual N-Channel MOSFETs: It integrates two N-channel MOSFETs in a single package, which can be used for various switching applications.
2. Low On-Resistance: Offers low R_DS(on) values, enhancing efficiency by minimizing power loss during operation.
3. Compact Package: Comes in a small, space-saving package suitable for compact circuit designs.
4. High-Speed Switching: Designed to provide fast switching speeds, which is vital for high-frequency applications.
5. Low Gate Charge: Features a low gate charge, reducing the power required to drive the MOSFET and improving overall efficiency.
6. Rugged Construction: Built to handle harsh environmental conditions and ensure reliability in various applications.
7. Thermal Performance: Optimized for good thermal performance to manage heat dissipation efficiently.
These features make the FDC6327C suitable for applications in power management, load switching, and other areas where efficient and compact switching solutions are required.
1. Dual N-Channel MOSFETs: It integrates two N-channel MOSFETs in a single package, which can be used for various switching applications.
2. Low On-Resistance: Offers low R_DS(on) values, enhancing efficiency by minimizing power loss during operation.
3. Compact Package: Comes in a small, space-saving package suitable for compact circuit designs.
4. High-Speed Switching: Designed to provide fast switching speeds, which is vital for high-frequency applications.
5. Low Gate Charge: Features a low gate charge, reducing the power required to drive the MOSFET and improving overall efficiency.
6. Rugged Construction: Built to handle harsh environmental conditions and ensure reliability in various applications.
7. Thermal Performance: Optimized for good thermal performance to manage heat dissipation efficiently.
These features make the FDC6327C suitable for applications in power management, load switching, and other areas where efficient and compact switching solutions are required.
Pinout
The FDC6327C is a dual N-Channel MOSFET, primarily used for switching applications. It is packaged in an SOT-23-6 configuration, which means it has six pins. Here's a quick rundown of the pin functions:
1. Pin 1 (Source 1): Source terminal for MOSFET 1.
2. Pin 2 (Gate 1): Gate terminal for MOSFET 1, used to control the channel.
3. Pin 3 (Drain 2): Drain terminal for MOSFET 2.
4. Pin 4 (Source 2): Source terminal for MOSFET 2.
5. Pin 5 (Gate 2): Gate terminal for MOSFET 2, used to control the channel.
6. Pin 6 (Drain 1): Drain terminal for MOSFET 1.
These MOSFETs are typically used in low-voltage DC-DC conversion applications, load switching, and other general-purpose switching tasks in electronic devices. The compact SOT-23-6 package makes it suitable for space-constrained applications.
1. Pin 1 (Source 1): Source terminal for MOSFET 1.
2. Pin 2 (Gate 1): Gate terminal for MOSFET 1, used to control the channel.
3. Pin 3 (Drain 2): Drain terminal for MOSFET 2.
4. Pin 4 (Source 2): Source terminal for MOSFET 2.
5. Pin 5 (Gate 2): Gate terminal for MOSFET 2, used to control the channel.
6. Pin 6 (Drain 1): Drain terminal for MOSFET 1.
These MOSFETs are typically used in low-voltage DC-DC conversion applications, load switching, and other general-purpose switching tasks in electronic devices. The compact SOT-23-6 package makes it suitable for space-constrained applications.
Manufacturer
The FDC6327C is manufactured by ON Semiconductor, a company known for designing and manufacturing semiconductor components. ON Semiconductor provides a wide range of products that include power management, analog, sensors, logic, timing, connectivity, discrete, and custom devices. These products are widely used in various applications across the automotive, industrial, cloud power, and Internet of Things (IoT) sectors.
Application
The FDC6327C is a dual N-Channel MOSFET used primarily in power management applications. Its compact design makes it suitable for portable electronic devices such as smartphones, tablets, and laptops. It is often used in DC-DC converters, load switches, battery protection circuits, and power supply circuits within these devices. Its low on-resistance and high efficiency make it ideal for optimizing battery life and minimizing power loss. Additionally, it can be used in consumer electronics, automotive systems, and industrial applications where efficient power switching is critical.
Package
The FDC6327C is a dual N-Channel MOSFET, and it comes in a SuperSOT-6 package type. This package is a small, surface-mount type that is commonly used for high-density applications.
