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FDC8878
+BOMMOSFET N-CH 30V 8A/8A SUPERSOT6
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Manufactureronsemi
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Mfr. Part #FDC8878
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Datasheet FDC8878 DataSheet
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In Stock10367
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Specifications
| Attribute | Value |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Ta), 8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 16mOhm @ 8A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1040 pF @ 15 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
Overview
Description
Understanding such a model would require examining its datasheet or technical documentation provided by the manufacturer, which outlines its specifications, functionalities, use cases, and implementation guidelines. This information is essential for engineers and developers to integrate the component effectively into their projects, ensuring compatibility and optimal performance. If you have a specific application or context in mind (such as a specific industry or type of device), additional details might help in providing a more precise introduction. For further information, consulting the manufacturer's resources or technical support might be necessary.
Equivalent
Features
1. Dual N-Channel Configuration: Comprising two N-channel MOSFETs in a single package, which is beneficial for compact designs and high-efficiency requirements.
2. Low On-Resistance: Offers low R_DS(on), which reduces power loss and increases efficiency, ideal for high-performance applications.
3. SO-8 Package: Comes in a standard SO-8 package, which is widely used for surface-mount applications, facilitating easy integration into circuit designs.
4. High-Speed Switching: Capable of rapid switching, enhancing performance in switching power supplies and other applications requiring quick response times.
5. Thermal Performance: Designed to handle significant thermal loads, making it suitable for applications with higher power demands.
6. Rugged Design: Built to withstand voltage and current stresses, providing reliability in demanding environments.
These features make the FDC8878 suitable for use in power management, load switching, and other general-purpose switching applications in electronic devices.
Pinout
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate regulates the flow of current between the drain and source.
2. Source (S): This is the terminal through which the carriers enter the channel. It is connected to ground or a lower voltage.
3. Drain (D): This is the terminal through which the carriers exit the channel. It is connected to the load or a higher voltage.
Additional pins may include:
- Body or Substrate: This is often internally connected to the source terminal.
- Other control or feedback pins, depending on the specific features of the MOSFET model.
Always refer to the manufacturer's datasheet for the FDC8878 to get the precise pin configuration and functional details.