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FDD86102
+BOMMOSFET N-CH 100V 8A/36A DPAK
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Manufactureronsemi
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Mfr. Part #FDD86102
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Datasheet FDD86102 DataSheet
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Package TO-252-3
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In Stock2389
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 8A (Ta), 36A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 24mOhm @ 8A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1035 pF @ 50 V |
| Power Dissipation (Max) | 3.1W (Ta), 62W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Overview
Description
Key features of the FDD86102 include low on-resistance, which minimizes power loss, and its ability to handle high currents and voltages. It is often packaged in an industry-standard format for easy integration into existing circuit designs. The device is designed to maximize efficiency and reliability, making it suitable for a variety of applications that require precise control of power flow.
Overall, the FDD86102 is valued in electronics for its robustness, efficiency, and versatility in managing electrical loads, contributing to the optimization of power systems in various technological applications.
Equivalent
1. NXP PSMN1R5-40YLD
2. ON Semiconductor NTMFS5C604NL
3. Infineon IPP041N10N3 G
4. Vishay SiR680ADP
5. STMicroelectronics STL140N10F7
Make sure to compare specific electrical characteristics and package types when selecting an equivalent.
Features
1. Voltage and Current Ratings: The device typically supports a high voltage and current rating, making it suitable for various power applications.
2. Low On-Resistance: It offers low on-state resistance, which helps in minimizing power loss and improving efficiency during operation.
3. Fast Switching: This MOSFET is designed for fast switching speeds, which enhances performance in high-frequency applications.
4. Thermal Performance: It often comes with improved thermal characteristics, allowing it to operate effectively in demanding thermal environments.
5. Package Options: The FDD86102 is available in different package options, providing flexibility for integration into various circuit designs.
6. Robust Design: It usually features robust construction that can withstand high stress and harsh operating conditions.
The FDD86102 is ideal for use in applications like power supplies, motor drives, and other circuits requiring efficient power handling.
Pinout
- Pin Count: 8 pins.
- Function:
- Drain (D): Connects to the load. Multiple pins (often 2 or 3) may be connected to the drain for better current handling.
- Source (S): Connects to the ground or return path. Multiple pins (often 3 or 4) may be connected to the source.
- Gate (G): Controls the MOSFET switching. Typically, only one pin is used for the gate.
In MOSFETs like the FDD86102, the gate receives a voltage to create a conductive path between the source and drain, allowing current to flow. These devices are commonly used for their efficient switching and low on-resistance characteristics in power management applications. Always refer to the specific datasheet of the FDD86102 for detailed pin configuration and electrical characteristics.
Manufacturer
Application
1. DC-DC Converters: Used in power supply circuits to convert one DC voltage level to another.
2. Motor Control: Facilitates efficient control of motors in industrial and consumer applications.
3. Switching Regulators: Used in voltage regulation circuits to maintain stable output voltage.
4. Load Switching: Employed in battery-powered devices for efficient power distribution.
5. Inverter Circuits: Used in converting DC to AC power.
These applications benefit from the FDD86102's efficiency, fast switching speed, and thermal performance.