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FDD86102LZ
+BOMMOSFET N-CH 100V 8A/35A DPAK
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Manufactureronsemi
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Mfr. Part #FDD86102LZ
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Datasheet FDD86102LZ DataSheet
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Package TO-252-3
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In Stock4300
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Ta), 35A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 22.5mOhm @ 8A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 26 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1540 pF @ 50 V |
| PowerDissipation(Max) | 3.1W (Ta), 54W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Overview
Description
The FDD86102LZ is a 100V, N-channel MOSFET designed by ON Semiconductor, well-suited for power management applications. It features a low on-state resistance, enhancing efficiency by reducing energy loss during operation. This MOSFET is packaged in a PowerTrench® configuration, which optimizes space and thermal performance, making it ideal for high-density circuit designs.
Key specifications include a maximum continuous drain current (ID) of 82A and a maximum pulsed drain current of 330A, allowing it to handle substantial power loads. The gate-to-source voltage (VGS) can range from -20V to +20V, ensuring flexibility in various driving conditions. The device also exhibits excellent switching characteristics, with fast turn-on and turn-off times that aid in minimizing switching losses and electromagnetic interference (EMI).
Additionally, the FDD86102LZ is equipped with ruggedness features like avalanche energy capability and a thermally-enhanced package, ensuring reliability under stress. This MOSFET is commonly used in DC-DC converters, motor drives, and other power conversion systems.
Key specifications include a maximum continuous drain current (ID) of 82A and a maximum pulsed drain current of 330A, allowing it to handle substantial power loads. The gate-to-source voltage (VGS) can range from -20V to +20V, ensuring flexibility in various driving conditions. The device also exhibits excellent switching characteristics, with fast turn-on and turn-off times that aid in minimizing switching losses and electromagnetic interference (EMI).
Additionally, the FDD86102LZ is equipped with ruggedness features like avalanche energy capability and a thermally-enhanced package, ensuring reliability under stress. This MOSFET is commonly used in DC-DC converters, motor drives, and other power conversion systems.
Equivalent
The FDD86102LZ is an N-channel MOSFET. Equivalent products are those with similar specifications like voltage, current rating, package type, and Rds(on) values. Consider:
1. Infineon BSC123N08NS5
2. ON Semiconductor NTMFS5C604NL
3. Vishay SI7467DP
4. STMicroelectronics STL110N8F7
Ensure to compare datasheets to confirm compatibility for your specific application, as variations in parameters might exist.
1. Infineon BSC123N08NS5
2. ON Semiconductor NTMFS5C604NL
3. Vishay SI7467DP
4. STMicroelectronics STL110N8F7
Ensure to compare datasheets to confirm compatibility for your specific application, as variations in parameters might exist.
Features
The FDD86102LZ is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) featuring the following key characteristics:
1. N-Channel MOSFET: It uses an electron flow for operation, making it suitable for high-speed and high-efficiency applications.
2. Low On-Resistance: This feature reduces power loss and heat generation, enhancing performance in power-efficient applications.
3. Fast Switching Speed: Ideal for applications requiring quick switching capabilities, such as in power converters and motor controllers.
4. High Voltage Rating: Handles high voltage levels, making it suitable for robust applications.
5. Thermal Performance: Designed for efficient heat dissipation, ensuring reliability and stability under thermal stress.
6. Compact Package: Available in a small form factor, suitable for space-constrained applications.
7. Enhanced Ruggedness: Provides better resistance to stress and harsh operational conditions.
8. Applications: Commonly used in power management, automotive, industrial, and consumer electronics for tasks like load switching and power conversion.
This MOSFET is valued for its efficiency and reliability in demanding electronic applications.
1. N-Channel MOSFET: It uses an electron flow for operation, making it suitable for high-speed and high-efficiency applications.
2. Low On-Resistance: This feature reduces power loss and heat generation, enhancing performance in power-efficient applications.
3. Fast Switching Speed: Ideal for applications requiring quick switching capabilities, such as in power converters and motor controllers.
4. High Voltage Rating: Handles high voltage levels, making it suitable for robust applications.
5. Thermal Performance: Designed for efficient heat dissipation, ensuring reliability and stability under thermal stress.
6. Compact Package: Available in a small form factor, suitable for space-constrained applications.
7. Enhanced Ruggedness: Provides better resistance to stress and harsh operational conditions.
8. Applications: Commonly used in power management, automotive, industrial, and consumer electronics for tasks like load switching and power conversion.
This MOSFET is valued for its efficiency and reliability in demanding electronic applications.
Pinout
The FDD86102LZ is an N-channel MOSFET manufactured by ON Semiconductor. It is typically used for applications such as DC-DC converters, load switching, and power management. The FDD86102LZ comes in a TO-252 package, which is also known as the DPAK package. This package has three pins.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the channel between the drain and source can be turned on or off.
2. Drain (D): This pin is the terminal through which the current enters the MOSFET in the on state. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which the current exits the MOSFET in the on state. It is usually connected to ground in many applications.
The FDD86102LZ is known for its low on-resistance and high efficiency, making it suitable for high-current applications.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the channel between the drain and source can be turned on or off.
2. Drain (D): This pin is the terminal through which the current enters the MOSFET in the on state. It is connected to the load in most applications.
3. Source (S): This pin is the terminal through which the current exits the MOSFET in the on state. It is usually connected to ground in many applications.
The FDD86102LZ is known for its low on-resistance and high efficiency, making it suitable for high-current applications.
Manufacturer
The FDD86102LZ is manufactured by ON Semiconductor. ON Semiconductor is a company that specializes in semiconductor manufacturing, providing a wide range of products including power management solutions, analog devices, discrete components, and custom devices. The company focuses on designing and producing energy-efficient electronics for sectors such as automotive, industrial, medical, and consumer electronics.
Application
The FDD86102LZ is an N-channel MOSFET commonly used in applications that require efficient power management and switching. Key application areas include:
1. DC-DC Converters: Utilized in power supply circuits for voltage regulation and conversion.
2. Load Switches: Acts as a switch for controlling power to various components in electronic devices.
3. Motor Drives: Used in controlling motors in automotive and industrial applications.
4. Power Management Systems: Integral to systems that require efficient power distribution and management.
5. Consumer Electronics: Helps in managing power in devices like laptops, smartphones, and other portable electronics.
Its low on-resistance and high efficiency make it suitable for applications requiring robust power handling.
1. DC-DC Converters: Utilized in power supply circuits for voltage regulation and conversion.
2. Load Switches: Acts as a switch for controlling power to various components in electronic devices.
3. Motor Drives: Used in controlling motors in automotive and industrial applications.
4. Power Management Systems: Integral to systems that require efficient power distribution and management.
5. Consumer Electronics: Helps in managing power in devices like laptops, smartphones, and other portable electronics.
Its low on-resistance and high efficiency make it suitable for applications requiring robust power handling.
Package
The FDD86102LZ is a N-channel MOSFET housed in a TO-252 package type, also known as DPAK. This surface-mount package is designed for high efficiency and performance in power management applications.
