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FDD86110
+BOMMOSFET N-CH 100V 12.5A/50A DPAK
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Manufactureronsemi
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Mfr. Part #FDD86110
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Datasheet FDD86110 DataSheet
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Package TO-252-3
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In Stock2650
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Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 12.5A (Ta), 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 10.2mOhm @ 12.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2265 pF @ 50 V |
| Power Dissipation (Max) | 3.1W (Ta), 127W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Overview
Description
The FDD86110 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification. Manufactured by ON Semiconductor, this component is part of the company's PowerTrench® family, which is known for low on-resistance and fast switching capabilities. The FDD86110 is particularly useful in applications like DC-DC converters, motor drives, and power management systems.
Key specifications include a maximum drain-source voltage (V_ds) of around 100V, a continuous drain current (I_d) of about 80A, and a gate-source voltage (V_gs) of ±20V. It features a low R_ds(on) (drain-source on-resistance) that reduces power loss and improves efficiency, making it suitable for high-efficiency power conversion applications. The package type is often a TO-252 (DPAK), which is suitable for surface mounting.
Overall, the FDD86110 is valued for its robust performance in high-power applications, ensuring efficient energy use and reliability in demanding electronic systems.
Key specifications include a maximum drain-source voltage (V_ds) of around 100V, a continuous drain current (I_d) of about 80A, and a gate-source voltage (V_gs) of ±20V. It features a low R_ds(on) (drain-source on-resistance) that reduces power loss and improves efficiency, making it suitable for high-efficiency power conversion applications. The package type is often a TO-252 (DPAK), which is suitable for surface mounting.
Overall, the FDD86110 is valued for its robust performance in high-power applications, ensuring efficient energy use and reliability in demanding electronic systems.
Equivalent
The FDD86110 is a N-channel MOSFET. Equivalent products include:
1. IRF540N - by Infineon Technologies (formerly International Rectifier)
2. FDP6030BL - by ON Semiconductor
3. STP60NF06 - by STMicroelectronics
4. IPP054N08N3 - by Infineon Technologies
These equivalents have similar voltage and current ratings but ensure to check the datasheets for specific parameters and compatibility with your application.
1. IRF540N - by Infineon Technologies (formerly International Rectifier)
2. FDP6030BL - by ON Semiconductor
3. STP60NF06 - by STMicroelectronics
4. IPP054N08N3 - by Infineon Technologies
These equivalents have similar voltage and current ratings but ensure to check the datasheets for specific parameters and compatibility with your application.
Features
The FDD86110 is a MOSFET transistor featuring advanced technology for improved performance in electronic applications. Key features of the FDD86110 include:
1. Voltage and Current Ratings: It typically handles high voltages and currents, making it suitable for demanding applications.
2. Low On-Resistance: The MOSFET boasts a low on-resistance, which minimizes power loss and improves efficiency.
3. Fast Switching Speed: Enables rapid on-off cycles, making it ideal for high-speed applications.
4. Thermal Performance: Designed to manage heat efficiently, allowing for reliable operation under high power conditions.
5. Rugged Construction: Offers robustness against electrical and thermal stresses.
6. Applications: Commonly used in power management, motor drives, and DC-DC converters.
7. Package Type: Available in various industry-standard packages for compatibility and ease of integration into circuits.
These features make the FDD86110 a versatile choice for engineers seeking reliable and efficient MOSFET solutions in their electronic designs.
1. Voltage and Current Ratings: It typically handles high voltages and currents, making it suitable for demanding applications.
2. Low On-Resistance: The MOSFET boasts a low on-resistance, which minimizes power loss and improves efficiency.
3. Fast Switching Speed: Enables rapid on-off cycles, making it ideal for high-speed applications.
4. Thermal Performance: Designed to manage heat efficiently, allowing for reliable operation under high power conditions.
5. Rugged Construction: Offers robustness against electrical and thermal stresses.
6. Applications: Commonly used in power management, motor drives, and DC-DC converters.
7. Package Type: Available in various industry-standard packages for compatibility and ease of integration into circuits.
These features make the FDD86110 a versatile choice for engineers seeking reliable and efficient MOSFET solutions in their electronic designs.
Pinout
The FDD86110 is a power MOSFET manufactured by ON Semiconductor, typically used for applications requiring efficient power conversion. It comes in a standard TO-252-3 (DPAK) package, which has 3 pins. Here's a brief description of its pin configuration:
1. Gate (G): This pin is responsible for turning the MOSFET on or off. It receives the input signal that controls the conductivity between the drain and source.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): The source pin is connected to the ground or the negative side of the supply voltage in most common configurations.
These pins enable the FDD86110 to function effectively in switching and amplification applications, making it suitable for a variety of power management roles in electronic circuits.
1. Gate (G): This pin is responsible for turning the MOSFET on or off. It receives the input signal that controls the conductivity between the drain and source.
2. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the drain to the source.
3. Source (S): The source pin is connected to the ground or the negative side of the supply voltage in most common configurations.
These pins enable the FDD86110 to function effectively in switching and amplification applications, making it suitable for a variety of power management roles in electronic circuits.
Manufacturer
The FDD86110 is manufactured by ON Semiconductor. ON Semiconductor, now officially known as onsemi, is a semiconductor supplier company that specializes in intelligent sensing and power solutions. The company designs and manufactures a wide range of semiconductor components, including power management devices, analog devices, sensors, and discrete components. onsemi serves various industries, including automotive, industrial, communications, computing, and consumer electronics, providing technologies that improve energy efficiency, enable smart sensing, and facilitate advanced connectivity.
Application
The FDD86110 is a PowerTrench® MOSFET commonly used in applications that require efficient power management and high-speed switching. Its primary applications include:
1. DC-DC converters: Utilized in power supply units for converting voltage levels efficiently.
2. Motor drives: Employed in controlling motors in automotive and industrial applications.
3. Load switches: Used in switching power loads in various electronic devices.
4. Synchronous rectification: Applied in power supplies to improve efficiency by minimizing conduction losses.
5. Battery management systems: Supports battery-powered devices by managing charging and discharging processes.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
1. DC-DC converters: Utilized in power supply units for converting voltage levels efficiently.
2. Motor drives: Employed in controlling motors in automotive and industrial applications.
3. Load switches: Used in switching power loads in various electronic devices.
4. Synchronous rectification: Applied in power supplies to improve efficiency by minimizing conduction losses.
5. Battery management systems: Supports battery-powered devices by managing charging and discharging processes.
These applications benefit from the MOSFET's low on-resistance and fast switching capabilities.
Package
The FDD86110 is a MOSFET transistor commonly packaged in a TO-252 (DPAK) format. This surface-mount package is compact and efficient, suitable for applications requiring moderate power dissipation.
