FDD8870

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FDD8870

+BOM

POWER FIELD-EFFECT TRANSISTOR, 2

  • ManufacturerFairchild Semiconductor

  • Mfr. Part #FDD8870

  • In Stock5221

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 21A (Ta), 160A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 3.9mOhm @ 35A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 118 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 5160 pF @ 15 V
Power Dissipation (Max) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)

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