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FDMA530PZ
+BOMPOWER FIELD-EFFECT TRANSISTOR, 6
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ManufacturerFairchild Semiconductor
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Mfr. Part #FDMA530PZ
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Datasheet FDMA530PZ DataSheet
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Package 6-VDFN
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In Stock1352
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 6.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 35mOhm @ 6.8A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 24 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 1070 pF @ 15 V |
| PowerDissipation(Max) | 2.4W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-MicroFET (2x2) |
Overview
Description
In such a course, students might explore advanced topics such as digital media production, film theory, media analysis, or the application of cutting-edge technologies in media creation. The curriculum would likely include a combination of theoretical study and practical application, allowing students to develop both a deep understanding and hands-on experience. Assignments could involve projects, research papers, and presentations aimed at enhancing critical thinking and technical skills.
Overall, FDMA530PZ would prepare students for higher-level work or research in digital media, equipping them with the necessary tools to excel in academia or the industry. Always refer to the specific institution's course catalog for precise details.
Equivalent
1. FDMA1027PZ - Similar P-channel MOSFET with comparable specifications.
2. Si2301DS - Another P-channel MOSFET offering similar performance.
3. IRLML6402 - A P-channel MOSFET suited for similar applications.
When selecting an equivalent, ensure the voltage, current ratings, and package type match your application's requirements. Always verify with manufacturer datasheets before substituting components.
Features
1. N-Channel MOSFET: It is an enhancement mode N-channel MOSFET.
2. Low On-resistance: Offers low R_DS(on) which improves efficiency and minimizes energy loss.
3. Compact Package: Available in a SuperSOT-6 package that is space-efficient, suitable for compact designs.
4. High-Speed Switching: Capable of handling high-speed switching which is beneficial for applications requiring rapid on/off states.
5. Low Threshold Voltage: Operates efficiently at lower gate voltages.
6. Thermal Resistance: Designed to handle thermal stress with an optimal thermal resistance profile.
7. Applications: Ideal for use in DC-DC converters, load switches, and other power management tasks.
8. RoHS Compliant: The device meets environmental standards, reducing hazardous substances.
These features make the FDMA530PZ suitable for use in compact, energy-efficient electronics requiring reliable power management solutions.
Pinout
1. Pin Count: 8 pins.
2. Pin Functions:
- Pins 1, 2, 3 (Source1): These pins are connected to the source of the first MOSFET.
- Pin 4 (Gate1): This pin is used to control the gate of the first MOSFET.
- Pin 5 (Gate2): This pin is used to control the gate of the second MOSFET.
- Pins 6, 7, 8 (Source2): These pins are connected to the source of the second MOSFET.
- Backside (Drain): The drain is common for both MOSFETs and is connected to the thermal pad on the backside of the package.
This configuration allows for simplified design and routing in PCB layouts, and the device is typically used for switching applications in portable electronics due to its low on-resistance and compact form factor.