Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 46A |
| Rds On(Max) @ Id Vgs | 11.6mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 34nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1110pF @ 15V, 2360pF @ 15V |
| Power - Max | 1.9W, 2.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
FDMC007N30D refers to a specific N-channel MOSFET manufactured by ON Semiconductor. This MOSFET is designed for applications requiring efficient switching and low on-resistance. Key features include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of approximately 7A, making it suitable for moderate power applications.
The FDMC007N30D is built using advanced PowerTrench® technology, which enhances its performance by reducing gate charge and improving switching speeds. This results in higher efficiency and reduced power losses in electronic circuits. The MOSFET is housed in a compact, surface-mount package, typically a MicroFET package, which is ideal for space-constrained designs.
Common applications for the FDMC007N30D include DC-DC converters, load switches, and general-purpose switching in portable electronics and computing devices. Its low on-resistance reduces conduction losses, while its fast switching capabilities make it suitable for high-frequency applications. When considering its use, ensure the operating conditions match the component's specifications to maintain reliability and performance.
The FDMC007N30D is built using advanced PowerTrench® technology, which enhances its performance by reducing gate charge and improving switching speeds. This results in higher efficiency and reduced power losses in electronic circuits. The MOSFET is housed in a compact, surface-mount package, typically a MicroFET package, which is ideal for space-constrained designs.
Common applications for the FDMC007N30D include DC-DC converters, load switches, and general-purpose switching in portable electronics and computing devices. Its low on-resistance reduces conduction losses, while its fast switching capabilities make it suitable for high-frequency applications. When considering its use, ensure the operating conditions match the component's specifications to maintain reliability and performance.
Equivalent
The FDMC007N30D is a power MOSFET. Equivalent products would include other MOSFETs with similar specifications, such as:
1. IRF3205 - Similar voltage and current ratings.
2. STP30NF10 - From STMicroelectronics, with equivalent performance.
3. NXP PSMN1R2-30PL - A related option by NXP.
4. Toshiba TPH1R306PL - Comparable in functionality.
Ensure to verify each product's datasheet to confirm electrical characteristics and compatibility for your specific application.
1. IRF3205 - Similar voltage and current ratings.
2. STP30NF10 - From STMicroelectronics, with equivalent performance.
3. NXP PSMN1R2-30PL - A related option by NXP.
4. Toshiba TPH1R306PL - Comparable in functionality.
Ensure to verify each product's datasheet to confirm electrical characteristics and compatibility for your specific application.
Features
The FDMC007N30D is a type of power MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The continuous drain current (I_D) is usually around 18A, allowing it to handle significant current loads.
3. Low On-Resistance: Featuring a low R_DS(on), it minimizes power loss and improves efficiency, especially in high-frequency applications.
4. PowerPAK® Package: The MOSFET is available in a PowerPAK® package, known for excellent thermal performance and compact size, ideal for space-constrained designs.
5. Fast Switching Speed: It offers rapid switching capabilities, which is advantageous for applications requiring high-speed operation.
6. Thermal Performance: The design ensures good heat dissipation, contributing to higher reliability and performance in thermally demanding environments.
7. Applications: Commonly used in DC-DC converters, power management systems, and other applications requiring efficient power control.
These features make the FDMC007N30D a versatile choice for various electronic applications requiring effective power management and thermal efficiency.
1. Voltage Rating: It typically has a drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The continuous drain current (I_D) is usually around 18A, allowing it to handle significant current loads.
3. Low On-Resistance: Featuring a low R_DS(on), it minimizes power loss and improves efficiency, especially in high-frequency applications.
4. PowerPAK® Package: The MOSFET is available in a PowerPAK® package, known for excellent thermal performance and compact size, ideal for space-constrained designs.
5. Fast Switching Speed: It offers rapid switching capabilities, which is advantageous for applications requiring high-speed operation.
6. Thermal Performance: The design ensures good heat dissipation, contributing to higher reliability and performance in thermally demanding environments.
7. Applications: Commonly used in DC-DC converters, power management systems, and other applications requiring efficient power control.
These features make the FDMC007N30D a versatile choice for various electronic applications requiring effective power management and thermal efficiency.
Pinout
The FDMC007N30D is a PowerTrench® N-channel MOSFET from ON Semiconductor. It typically comes in a Power33 package, which is a type of surface-mount package. This MOSFET is designed for use in power management applications.
Pin Count:
- The FDMC007N30D features a 3-pin configuration.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the current enters the MOSFET in N-channel devices.
3. Source (S): The source is the terminal through which the current exits the MOSFET in N-channel devices.
The key functions of this device are to handle large currents and high voltages efficiently, making it suitable for various applications such as DC-DC converters, load switching, and synchronous rectification. Its low on-resistance and fast switching capabilities are crucial for achieving high efficiency.
Pin Count:
- The FDMC007N30D features a 3-pin configuration.
Pin Functions:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the current enters the MOSFET in N-channel devices.
3. Source (S): The source is the terminal through which the current exits the MOSFET in N-channel devices.
The key functions of this device are to handle large currents and high voltages efficiently, making it suitable for various applications such as DC-DC converters, load switching, and synchronous rectification. Its low on-resistance and fast switching capabilities are crucial for achieving high efficiency.
Manufacturer
The FDMC007N30D is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading supplier of semiconductor-based solutions. The company focuses on energy-efficient electronics that provide a foundation for modern technology, including power and signal management, logic, discrete, and custom devices. onsemi serves a broad range of markets, including automotive, industrial, cloud power, and Internet of Things (IoT), with a commitment to providing innovative and sustainable solutions.
Application
The FDMC007N30D is an N-channel MOSFET designed for efficient power switching applications. Its application areas include:
1. DC-DC Converters: Used in power management within consumer electronics.
2. Motor Drives: Suitable for controlling motors in industrial and automotive systems.
3. Switching Regulators: Ideal for voltage regulation in power supply circuits.
4. Battery Management: Used in battery protection circuits due to its efficient switching capabilities.
5. Load Switches: Acts as a switch for connecting and disconnecting loads in electronic circuits.
6. Lighting Systems: Used in LED drivers for efficient power control.
Its features, such as low on-resistance, make it suitable for applications requiring efficient and reliable power handling.
1. DC-DC Converters: Used in power management within consumer electronics.
2. Motor Drives: Suitable for controlling motors in industrial and automotive systems.
3. Switching Regulators: Ideal for voltage regulation in power supply circuits.
4. Battery Management: Used in battery protection circuits due to its efficient switching capabilities.
5. Load Switches: Acts as a switch for connecting and disconnecting loads in electronic circuits.
6. Lighting Systems: Used in LED drivers for efficient power control.
Its features, such as low on-resistance, make it suitable for applications requiring efficient and reliable power handling.
Package
The FDMC007N30D is a MOSFET transistor with a power package type known as MicroFET 3x3. This package is designed to offer enhanced thermal performance and is commonly used in various electronic applications where space-saving and efficient heat dissipation are required.
