Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 13A, 18A |
| Rds On(Max) @ Id Vgs | 10mOhm @ 13A, 10V |
| Vgs(th)(Max) @ Id | 2.7V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 24nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 1605pF @ 15V |
| Power - Max | 1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Overview
Description
The FDMS3669S is a dual N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management in applications like DC-DC converters, motor drives, and load switches.
### Key Features:
- Low On-Resistance (RDS(on)): 4.5 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: Up to 60 A (continuous drain current).
- Fast Switching: Optimized for high-frequency operation.
- Compact Power56 Package: Enhances thermal performance and PCB space efficiency.
- Logic-Level Gate Drive: Compatible with 3.3 V/5 V control signals.
### Applications:
- Synchronous buck converters
- Battery protection circuits
- Power tools & industrial systems
This MOSFET is ideal for high-power, high-efficiency designs requiring low losses and compact form factors.
### Key Features:
- Low On-Resistance (RDS(on)): 4.5 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: Up to 60 A (continuous drain current).
- Fast Switching: Optimized for high-frequency operation.
- Compact Power56 Package: Enhances thermal performance and PCB space efficiency.
- Logic-Level Gate Drive: Compatible with 3.3 V/5 V control signals.
### Applications:
- Synchronous buck converters
- Battery protection circuits
- Power tools & industrial systems
This MOSFET is ideal for high-power, high-efficiency designs requiring low losses and compact form factors.
Equivalent
The FDMS3669S is a power MOSFET, and equivalent products can include other MOSFETs with similar electrical characteristics. Some potential equivalents might be:
1. NXP's PSMN1R2-25YLC
2. Infineon's BSC026N08NS5
3. ON Semiconductor's NTMFS5C604NL
Always compare the datasheets, especially the voltage and current ratings, RDS(on), and package type, to ensure compatibility.
1. NXP's PSMN1R2-25YLC
2. Infineon's BSC026N08NS5
3. ON Semiconductor's NTMFS5C604NL
Always compare the datasheets, especially the voltage and current ratings, RDS(on), and package type, to ensure compatibility.
Features
The FDMS3669S is a dual N-channel MOSFET with the following key features:
- Voltage Rating: 60V
- Current Rating: 50A (per channel)
- Low On-Resistance (RDS(on)): 3.6mΩ (max) at VGS=10V
- Fast Switching: Optimized for high-efficiency power conversion
- Package: Power56 (5x6mm), compact and thermally efficient
- Logic-Level Gate Drive: Compatible with 4.5V drive
- Low Gate Charge (Qg): Enhances switching performance
- AEC-Q101 Qualified: Suitable for automotive applications
Ideal for synchronous buck converters, motor drives, and high-current DC-DC applications.
- Voltage Rating: 60V
- Current Rating: 50A (per channel)
- Low On-Resistance (RDS(on)): 3.6mΩ (max) at VGS=10V
- Fast Switching: Optimized for high-efficiency power conversion
- Package: Power56 (5x6mm), compact and thermally efficient
- Logic-Level Gate Drive: Compatible with 4.5V drive
- Low Gate Charge (Qg): Enhances switching performance
- AEC-Q101 Qualified: Suitable for automotive applications
Ideal for synchronous buck converters, motor drives, and high-current DC-DC applications.
Pinout
The FDMS3669S is a power MOSFET designed for use in various electronic applications. It typically comes in a package with an 8-pin SO-8 configuration. The primary function of this MOSFET is to manage and control electrical power in circuits, acting as a switch or amplifier. It is often used in power management applications, DC-DC converters, and load switching. The FDMS3669S provides efficient power handling with low on-resistance and fast switching capabilities. The pins are generally used for the drain, source, and gate connections, with additional pins potentially serving for thermal and electrical enhancements. Always refer to the manufacturer's datasheet for precise pin configuration and functional details.
Manufacturer
The FDMS3669S is manufactured by ON Semiconductor, a company known for producing a wide range of semiconductor components. ON Semiconductor specializes in the design and manufacturing of energy-efficient electronics, providing solutions for power management, automotive, industrial, and consumer electronics markets. The company's product portfolio includes discrete and power management semiconductors, as well as integrated circuits (ICs), sensors, and custom devices. ON Semiconductor is recognized for its focus on delivering high-performance, sustainable, and energy-efficient solutions across various technological applications.
Application
The FDMS3669S is a MOSFET primarily used in power management applications due to its efficient energy handling and low on-resistance. It is commonly applied in DC-DC converters, battery protection circuits, and load switches. Additionally, it is suitable for use in synchronous rectification in power supplies, motor control systems, and LED drivers. Its compact design and thermal efficiency make it a good choice for portable and compact electronic devices, enhancing battery life and performance.
Package
The FDMS3669S is a power MOSFET, and it typically comes in an SO-8 package type. The SO-8 package is a small-outline integrated circuit package with eight pins, commonly used for surface-mount components.