Specifications
| Attribute | Value |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Dual Cool™, PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 14.5A (Ta), 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 7.5mOhm @ 14.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 44 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3135 pF @ 50 V |
| Power Dissipation (Max) | 3.2W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Overview
Description
The FDMS86101DC is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplifying signals. As a member of the power MOSFET family, it offers high efficiency and fast switching capabilities, making it suitable for applications like power management in computing and automotive systems.
Key features of the FDMS86101DC include low on-resistance, which minimizes power loss and heat generation, and high-speed switching, which enhances performance in dynamic operations. It typically operates at a low voltage, making it compatible with various low-power applications. The device is often encapsulated in a standard package that facilitates easy integration into circuit boards.
Its robust design ensures reliable performance under varying environmental conditions, and it often includes protection features against overvoltage, overcurrent, and thermal issues. This makes the FDMS86101DC a versatile choice for engineers looking to optimize power efficiency and reliability in their designs.
Key features of the FDMS86101DC include low on-resistance, which minimizes power loss and heat generation, and high-speed switching, which enhances performance in dynamic operations. It typically operates at a low voltage, making it compatible with various low-power applications. The device is often encapsulated in a standard package that facilitates easy integration into circuit boards.
Its robust design ensures reliable performance under varying environmental conditions, and it often includes protection features against overvoltage, overcurrent, and thermal issues. This makes the FDMS86101DC a versatile choice for engineers looking to optimize power efficiency and reliability in their designs.
Equivalent
The FDMS86101DC is a PowerTrench MOSFET from ON Semiconductor. Equivalent products might include similar N-channel MOSFETs from other manufacturers such as the Vishay's SiR498DP, Infineon's BSC014NE2LS, or Toshiba's TPHR8504PL. When searching for equivalents, ensure matching specifications such as voltage and current ratings, RDS(on), package type, and switching speed to ensure compatibility with your application. Always verify the datasheets for exact specifications.
Features
The FDMS86101DC is a PowerTrench® MOSFET designed for high efficiency and performance in power management applications. Key features include:
1. Low RDS(on): This MOSFET offers very low on-resistance, which minimizes conduction losses, enhancing overall efficiency.
2. Fast Switching: It provides fast switching speeds, which help in reducing switching losses and improving power conversion efficiency.
3. Advanced Package Design: The MOSFET comes in a compact, thermally efficient package that facilitates better heat dissipation and is suitable for space-constrained applications.
4. High Power Density: The device is optimized for high power density applications, making it suitable for use in DC-DC converters and power supply circuits.
5. Robust Performance: It supports robust performance with high thermal stability, ensuring reliable operation across various conditions.
6. Enhanced Safe Operating Area (SOA): The enhanced SOA increases the reliability of the device under different operating conditions.
These features make the FDMS86101DC suitable for a wide range of applications requiring efficient and reliable power management solutions.
1. Low RDS(on): This MOSFET offers very low on-resistance, which minimizes conduction losses, enhancing overall efficiency.
2. Fast Switching: It provides fast switching speeds, which help in reducing switching losses and improving power conversion efficiency.
3. Advanced Package Design: The MOSFET comes in a compact, thermally efficient package that facilitates better heat dissipation and is suitable for space-constrained applications.
4. High Power Density: The device is optimized for high power density applications, making it suitable for use in DC-DC converters and power supply circuits.
5. Robust Performance: It supports robust performance with high thermal stability, ensuring reliable operation across various conditions.
6. Enhanced Safe Operating Area (SOA): The enhanced SOA increases the reliability of the device under different operating conditions.
These features make the FDMS86101DC suitable for a wide range of applications requiring efficient and reliable power management solutions.
Pinout
The FDMS86101DC is a MOSFET device from ON Semiconductor, commonly used in power management applications. It typically comes in an SO-8 package, which has 8 pins. Here are the pin functions:
1. Source (S): Pins 1, 2, and 3 are typically connected to the source terminal of the MOSFET.
2. Gate (G): Pin 4 is the gate terminal, used to control the MOSFET's operation.
3. Drain (D): Pins 5, 6, 7, and 8 are usually connected to the drain terminal.
This configuration utilizes the typical layout for a Power Trench MOSFET, where multiple pins are used for the source and drain to allow for higher current handling and better thermal performance. The device is designed for use in applications requiring high efficiency and fast switching speed. Always refer to the specific datasheet for the most accurate and detailed information regarding pin configuration and electrical characteristics.
1. Source (S): Pins 1, 2, and 3 are typically connected to the source terminal of the MOSFET.
2. Gate (G): Pin 4 is the gate terminal, used to control the MOSFET's operation.
3. Drain (D): Pins 5, 6, 7, and 8 are usually connected to the drain terminal.
This configuration utilizes the typical layout for a Power Trench MOSFET, where multiple pins are used for the source and drain to allow for higher current handling and better thermal performance. The device is designed for use in applications requiring high efficiency and fast switching speed. Always refer to the specific datasheet for the most accurate and detailed information regarding pin configuration and electrical characteristics.
Manufacturer
The FDMS86101DC is manufactured by ON Semiconductor, a semiconductor company that provides a wide range of products, including power and signal management, logic, discrete, and custom devices. ON Semiconductor serves a variety of markets, such as automotive, industrial, cloud power, and the Internet of Things (IoT). The company focuses on energy-efficient solutions to help reduce global energy use.
Application
The FDMS86101DC is a MOSFET primarily used in power management applications. Its key areas of application include:
1. DC-DC Converters: Efficiently switching power in buck or boost converters for voltage regulation.
2. Telecommunications: Power regulation in telecom equipment.
3. Industrial Automation: Motor control and power conversion.
4. Consumer Electronics: Power management in devices like laptops and televisions.
5. Automotive Systems: Used in electric vehicle powertrains and battery management systems.
6. Renewable Energy Systems: Power conditioning in solar inverters and wind turbines.
Its low on-resistance and fast switching make it ideal for these high-efficiency applications.
1. DC-DC Converters: Efficiently switching power in buck or boost converters for voltage regulation.
2. Telecommunications: Power regulation in telecom equipment.
3. Industrial Automation: Motor control and power conversion.
4. Consumer Electronics: Power management in devices like laptops and televisions.
5. Automotive Systems: Used in electric vehicle powertrains and battery management systems.
6. Renewable Energy Systems: Power conditioning in solar inverters and wind turbines.
Its low on-resistance and fast switching make it ideal for these high-efficiency applications.
Package
The FDMS86101DC is a power MOSFET that comes in an 8-pin Power 56 (PQFN) package. This package type is designed for efficient thermal performance and compactness, suitable for high-frequency applications in power management.
