FDMS86105

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FDMS86105

+BOM

MOSFET N-CH 100V 6A/26A 8PQFN

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Specifications

Attribute Value
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 6A (Ta), 26A (Tc)
Drive Voltage(Max Rds On Min Rds On) 6V, 10V
Rds On(Max) @ Id Vgs 34mOhm @ 6A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 11 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 645 pF @ 50 V
Power Dissipation (Max) 2.5W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (5x6)

Overview

Description

The FDMS86105 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification. Key features of the FDMS86105 include low on-resistance and fast switching speeds, making it efficient for handling high-power applications while minimizing energy loss. It is typically packaged in a surface-mount design, such as an SO-8 or similar, facilitating its integration into compact and high-density circuit boards.
This MOSFET is often used in power management applications, including DC-DC converters, motor control circuits, and as part of the load switch in power distribution systems. Its robustness against high voltage and current makes it suitable for both consumer electronics and industrial applications. The FDMS86105 is designed to operate efficiently over a range of voltages and currents, offering reliability and performance in various electronic environments. Its design helps in improving thermal management and reducing electromagnetic interference, crucial for maintaining the integrity and performance of modern electronic devices.

Equivalent

The FDMS86105 is a specific model of N-channel MOSFET. Equivalent products typically have similar voltage, current ratings, and package type. Potential equivalents might include:
1. NXP PSMN1R0-30PL
2. Vishay SI7430DP
3. Infineon BSC010N03LS
4. ON Semiconductor NTMFS4935N
When selecting an equivalent, ensure the specifications meet the requirements of your application, taking into account factors like Rds(on), Vgs, and power dissipation. Always verify with datasheets for compatibility.

Features

The FDMS86105 is a power MOSFET designed for efficient power management. Key features include:
1. N-Channel MOSFET: It features an N-channel design, which typically offers faster switching and better efficiency compared to P-channel counterparts.
2. Voltage Rating: The MOSFET is rated for a maximum drain-source voltage (V_DS) of 30V, which allows it to be used in various low to medium voltage applications.
3. Current Capacity: It supports a continuous drain current (I_D) of up to 68A, making it suitable for high-power applications.
4. Low On-Resistance: The device boasts a low R_DS(on), which minimizes power loss and enhances efficiency, especially important in switching and power conversion applications.
5. Thermal Performance: The FDMS86105 is designed to handle high temperatures, with a junction-to-case thermal resistance that facilitates effective heat dissipation.
6. Package Type: It is typically available in a Power56 package, which provides compactness while allowing for efficient thermal management.
These features make the FDMS86105 suitable for applications like DC-DC converters, motor control, and other power management systems.

Pinout

The FDMS86105 is a power MOSFET commonly used in electronic applications for switching and amplifying signals. It is housed in a Power 56 package, which typically comprises a 5-lead configuration. The pin count is 5, and the pins generally function as follows:
1. Gate (G): This pin controls the MOSFET's switching state. Applying a voltage here allows current to flow between the drain and source.
2. Source (S): This is the terminal through which current enters the MOSFET, typically connected to the ground in N-channel MOSFETs like the FDMS86105.
3. Drain (D): The terminal through which current exits the MOSFET, connected to the load.
4. Source Sense (Ss): This pin is used for sensing the source current, often for current measurement or feedback purposes.
5. Drain Sense (Ds): Similar to the Source Sense, this pin allows for precision sensing of the drain current.
These functions enable the FDMS86105 to manage power efficiently in various circuits, such as power supplies and motor controllers. Always refer to the specific datasheet for detailed electrical characteristics and typical applications.

Manufacturer

The FDMS86105 is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor provides a broad range of products, including power and signal management, logic, discrete, and custom devices for a variety of industries such as automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power applications. The company focuses on energy-efficient innovations, aiming to enable customers to reduce global energy use.

Application

The FDMS86105 is a power MOSFET commonly used in applications requiring efficient power management and switching. Key application areas include:
1. DC-DC Converters: Used in voltage regulation for computers and telecommunications equipment.
2. Motor Control: Suitable for applications in automotive and industrial motor control systems.
3. Power Supplies: Utilized in power supply circuits for both consumer electronics and industrial equipment.
4. Battery Management: Employed in battery charging and discharging circuits.
5. Inverters: Used in inverter circuits for renewable energy systems.
6. Load Switches: Suitable for use as load switches in various electronic devices.
Its low on-resistance and high efficiency make it ideal for these applications.

Package

The FDMS86105 is typically available in a Power56 package, also known as an SO-8FL (Small Outline, 8 leads, Flat Lead) package. This package type is designed for efficient thermal performance and is commonly used for power MOSFETs.

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