FDMS86163P

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FDMS86163P

+BOM

MOSFET P-CH 100V 7.9A/50A 8PQFN

  • Manufactureronsemi

  • Mfr. Part #FDMS86163P

  • Package PowerTDFN-8

  • In Stock5272

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Specifications

Attribute Value
Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 7.9A (Ta), 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 22mOhm @ 7.9A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 59 nC @ 10 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 4085 pF @ 50 V
PowerDissipation(Max) 2.5W (Ta), 104W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

Overview

Description

The FDMS86163P is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management and switching applications. As a part of Fairchild Semiconductor's offering, this MOSFET is typically used in various electronic devices for tasks such as power conversion, load switching, and amplification. Key features often include low on-state resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for applications requiring efficient power handling and minimal energy loss.
The FDMS86163P is optimized for performance in demanding environments, providing reliability and longevity in its operational lifecycle. Its compact packaging and advanced silicon technology contribute to its effectiveness in reducing power consumption and enhancing overall device efficiency. Ideal for use in computing, telecommunications, and consumer electronics, the FDMS86163P addresses the need for components that support sustainable energy use and compact design without compromising on power output or performance. Always refer to the datasheet for specific electrical characteristics and handling guidelines to ensure proper application and integration into your projects.

Equivalent

The FDMS86163P is a PowerTrench MOSFET produced by ON Semiconductor. Equivalent products could include other N-channel MOSFETs with similar specifications, such as voltage and current ratings, from manufacturers like Vishay, Infineon, or STMicroelectronics. Specific equivalents might include Vishay's SiR846ADP, Infineon's BSC010NE2LS, or STMicroelectronics' STL120N4LF6. Always verify the datasheets to ensure compatibility regarding electrical characteristics and package type.

Features

The FDMS86163P is a PowerTrench® MOSFET designed by ON Semiconductor, offering efficient power management capabilities. Key features include:
1. Low On-Resistance: It provides a low RDS(on), which minimizes conduction losses and enhances efficiency in power applications.
2. High-Speed Switching: The device supports fast switching speeds, improving performance in high-frequency applications.
3. Thermal Performance: The MOSFET is designed for effective thermal management, enabling reliable operation under various thermal conditions.
4. Robust Design: With a rugged construction, it offers high avalanche energy capability and superior reliability, even in demanding environments.
5. Compact Package: The MOSFET comes in a compact Power56 package, which is suitable for space-constrained applications while maintaining performance.
6. Applications: It's ideal for use in DC-DC converters, synchronous rectification, load switching, and other power management applications.
These features make the FDMS86163P suitable for designers looking to optimize efficiency and reliability in electronic devices.

Pinout

The FDMS86163P is an N-channel MOSFET. It typically comes in a Power 56 (PQFN) package and features a pin count of 8. The primary functions of this MOSFET include acting as a switch or amplifier in electronic circuits, particularly in power management and load switching applications.
Key characteristics of the FDMS86163P include:
- Drain-Source Voltage (V_DS): Typically supports a maximum voltage, often around 30V to 100V, depending on the specific configuration.
- Continuous Drain Current (I_D): Usually rated for high current applications, often in the range of tens of amperes.
- Gate-Source Voltage (V_GS): Controls the MOSFET switching, typically within ±20V.
This MOSFET is used for its low on-resistance and high efficiency, making it suitable for applications like DC-DC converters, power supplies, and motor control circuits. For precise electrical characteristics and pin configurations, consulting the specific datasheet from the manufacturer is recommended.

Manufacturer

The FDMS86163P is manufactured by ON Semiconductor, now known as onsemi. onsemi is a leading semiconductor supplier company that specializes in designing and manufacturing a wide range of semiconductor components. These components include power and signal management, logic, discrete, and custom devices for various applications across automotive, industrial, communications, computing, consumer electronics, and medical sectors. onsemi focuses on providing efficient and sustainable solutions to promote smarter and greener technologies.

Application

The FDMS86163P is a power MOSFET commonly used in applications requiring efficient power management and switching performance. Key application areas include:
1. DC-DC Converters: Utilized in power supply circuits to efficiently convert voltage levels.
2. Motor Drives: Employed in controlling and driving motors in various devices and equipment.
3. Battery Management Systems: Used for efficient charging and discharging processes in battery-operated devices.
4. Power Management in Consumer Electronics: Ensures efficient power usage in devices like laptops, smartphones, and tablets.
5. Automotive Systems: Applied in electronic control units for enhancing the efficiency of automotive electrical systems.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.

Package

The FDMS86163P is a MOSFET, and its package type is Power 56, which is often referred to as a PowerPAK SO-8 package. This package type is designed for low-profile applications and efficient thermal performance.

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