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FDMS86163P
+BOMMOSFET P-CH 100V 7.9A/50A 8PQFN
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Manufactureronsemi
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Mfr. Part #FDMS86163P
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Package PowerTDFN-8
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In Stock5272
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 7.9A (Ta), 50A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 22mOhm @ 7.9A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 59 nC @ 10 V |
| Vgs(Max) | ±25V |
| InputCapacitance(Ciss)(Max)@Vds | 4085 pF @ 50 V |
| PowerDissipation(Max) | 2.5W (Ta), 104W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
Overview
Description
The FDMS86163P is optimized for performance in demanding environments, providing reliability and longevity in its operational lifecycle. Its compact packaging and advanced silicon technology contribute to its effectiveness in reducing power consumption and enhancing overall device efficiency. Ideal for use in computing, telecommunications, and consumer electronics, the FDMS86163P addresses the need for components that support sustainable energy use and compact design without compromising on power output or performance. Always refer to the datasheet for specific electrical characteristics and handling guidelines to ensure proper application and integration into your projects.
Equivalent
Features
1. Low On-Resistance: It provides a low RDS(on), which minimizes conduction losses and enhances efficiency in power applications.
2. High-Speed Switching: The device supports fast switching speeds, improving performance in high-frequency applications.
3. Thermal Performance: The MOSFET is designed for effective thermal management, enabling reliable operation under various thermal conditions.
4. Robust Design: With a rugged construction, it offers high avalanche energy capability and superior reliability, even in demanding environments.
5. Compact Package: The MOSFET comes in a compact Power56 package, which is suitable for space-constrained applications while maintaining performance.
6. Applications: It's ideal for use in DC-DC converters, synchronous rectification, load switching, and other power management applications.
These features make the FDMS86163P suitable for designers looking to optimize efficiency and reliability in electronic devices.
Pinout
Key characteristics of the FDMS86163P include:
- Drain-Source Voltage (V_DS): Typically supports a maximum voltage, often around 30V to 100V, depending on the specific configuration.
- Continuous Drain Current (I_D): Usually rated for high current applications, often in the range of tens of amperes.
- Gate-Source Voltage (V_GS): Controls the MOSFET switching, typically within ±20V.
This MOSFET is used for its low on-resistance and high efficiency, making it suitable for applications like DC-DC converters, power supplies, and motor control circuits. For precise electrical characteristics and pin configurations, consulting the specific datasheet from the manufacturer is recommended.
Manufacturer
Application
1. DC-DC Converters: Utilized in power supply circuits to efficiently convert voltage levels.
2. Motor Drives: Employed in controlling and driving motors in various devices and equipment.
3. Battery Management Systems: Used for efficient charging and discharging processes in battery-operated devices.
4. Power Management in Consumer Electronics: Ensures efficient power usage in devices like laptops, smartphones, and tablets.
5. Automotive Systems: Applied in electronic control units for enhancing the efficiency of automotive electrical systems.
These applications benefit from the MOSFET’s low on-resistance and fast switching capabilities.