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FDP120N10
+BOMMOSFET N-CH 100V 74A TO220-3
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Manufactureronsemi
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Mfr. Part #FDP120N10
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In Stock7966
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Specifications
| Attribute | Value |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 74A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 74A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5605 pF @ 25 V |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | FDP120 |
Overview
Description
The FDP120N10 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 120A, making it suitable for power management and conversion tasks in various electronic devices.
Key attributes include low on-resistance (R_DS(on)), which reduces power losses during operation, and fast switching speeds, enhancing performance in high-frequency applications. The device is often used in areas such as power supplies, motor drives, and lighting control systems.
The FDP120N10 is housed in a TO-220 package, facilitating effective heat dissipation. Its robust design and electrical characteristics make it a popular choice among engineers for applications requiring reliability and efficiency. Overall, this MOSFET is ideal for applications demanding high power handling and efficiency.
Key attributes include low on-resistance (R_DS(on)), which reduces power losses during operation, and fast switching speeds, enhancing performance in high-frequency applications. The device is often used in areas such as power supplies, motor drives, and lighting control systems.
The FDP120N10 is housed in a TO-220 package, facilitating effective heat dissipation. Its robust design and electrical characteristics make it a popular choice among engineers for applications requiring reliability and efficiency. Overall, this MOSFET is ideal for applications demanding high power handling and efficiency.
Equivalent
The FDP120N10 is a N-channel MOSFET primarily used in power applications. Equivalent products include the IRF120, STP12NK10Z, and AOD120N10. Always check datasheets for specific parameters like V_DS, I_D, and R_DS(on) to ensure compatibility for your application.
Features
The FDP120N10 is a N-channel MOSFET featuring a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 120A. Key features include:
- Low R_DS(on): Typically around 10 mΩ at a gate-source voltage (V_GS) of 10V, enabling efficient power conduction.
- High-speed switching: Suitable for applications requiring fast switching times, enhancing efficiency in power management.
- Thermal performance: It has a high thermal conductivity and can handle significant power dissipation, with a maximum junction temperature (T_j) of 175°C.
- Gate threshold voltage (V_GS(th)): Ranges from 2V to 4V, allowing for compatibility with various gate drive voltages.
- TO-220 package: Facilitates easy heat dissipation and is suitable for use in power supplies, motor drives, and other high-efficiency applications.
Overall, the FDP120N10 is ideal for high-power applications where efficiency and thermal management are crucial.
- Low R_DS(on): Typically around 10 mΩ at a gate-source voltage (V_GS) of 10V, enabling efficient power conduction.
- High-speed switching: Suitable for applications requiring fast switching times, enhancing efficiency in power management.
- Thermal performance: It has a high thermal conductivity and can handle significant power dissipation, with a maximum junction temperature (T_j) of 175°C.
- Gate threshold voltage (V_GS(th)): Ranges from 2V to 4V, allowing for compatibility with various gate drive voltages.
- TO-220 package: Facilitates easy heat dissipation and is suitable for use in power supplies, motor drives, and other high-efficiency applications.
Overall, the FDP120N10 is ideal for high-power applications where efficiency and thermal management are crucial.
Pinout
The FDP120N10 is an N-channel MOSFET designed for high-performance switching applications. It features a TO-220 package with a total of three pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
The FDP120N10 is rated for a maximum drain-source voltage (V_DS) of 100V and has a low on-resistance, making it suitable for applications like power management, motor control, and DC-DC converters.
Pin Count and Functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the drain.
The FDP120N10 is rated for a maximum drain-source voltage (V_DS) of 100V and has a low on-resistance, making it suitable for applications like power management, motor control, and DC-DC converters.
Manufacturer
The FDP120N10 is manufactured by Fairchild Semiconductor, which is known for its production of a wide range of semiconductor devices including power MOSFETs, diodes, and other electronic components. Fairchild Semiconductor specializes in providing solutions for power management, signal integrity, and other applications in the electronics industry.
Fairchild was founded in 1957 and has been a key player in the semiconductor market, particularly in the areas of power management and analog devices. The company has developed a reputation for innovation, reliability, and performance in its products. In 2016, Fairchild was acquired by Infineon Technologies AG, a German semiconductor manufacturer, further expanding its capabilities and market reach.
Overall, Fairchild Semiconductor, now part of Infineon, operates as a leading manufacturer in the semiconductor industry, focusing on high-performance components for various applications, including consumer electronics, automotive, and industrial sectors.
Fairchild was founded in 1957 and has been a key player in the semiconductor market, particularly in the areas of power management and analog devices. The company has developed a reputation for innovation, reliability, and performance in its products. In 2016, Fairchild was acquired by Infineon Technologies AG, a German semiconductor manufacturer, further expanding its capabilities and market reach.
Overall, Fairchild Semiconductor, now part of Infineon, operates as a leading manufacturer in the semiconductor industry, focusing on high-performance components for various applications, including consumer electronics, automotive, and industrial sectors.
Application
The FDP120N10 is an N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. Power Supplies: Efficiently switching and regulating voltage in DC-DC converters.
2. Motor Drivers: Controlling the speed and torque in electric motors.
3. Lighting Controls: Driving LED lighting systems for dimming and switching.
4. Audio Amplifiers: Enhancing performance in audio output stages.
5. Battery Management Systems: Optimizing charging and discharging cycles in battery applications.
Its low on-resistance and high speed make it ideal for these applications, contributing to improved efficiency and thermal management.
1. Power Supplies: Efficiently switching and regulating voltage in DC-DC converters.
2. Motor Drivers: Controlling the speed and torque in electric motors.
3. Lighting Controls: Driving LED lighting systems for dimming and switching.
4. Audio Amplifiers: Enhancing performance in audio output stages.
5. Battery Management Systems: Optimizing charging and discharging cycles in battery applications.
Its low on-resistance and high speed make it ideal for these applications, contributing to improved efficiency and thermal management.
Package
The FDP120N10 is typically available in a TO-220 package type. This package provides good thermal performance and is suitable for applications requiring high power handling and heat dissipation.
