Specifications
| Attribute | Value |
| Package | Tube |
| Series | UniFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 33A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 94mOhm @ 16.5A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 48 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 2135 pF @ 25 V |
| PowerDissipation(Max) | 37W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
Overview
Description
The FDPF33N25T is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor, now part of onsemi. This device is designed to manage high power and high-speed applications, making it suitable for a variety of electronic devices and systems.
Key Features:
1. N-Channel MOSFET: It allows current to flow when a positive voltage is applied to the gate terminal relative to the source.
2. Voltage and Current Ratings: It typically has a high voltage and current rating, enabling it to handle substantial loads. Specific ratings can be checked in the datasheet.
3. Low On-Resistance: This ensures minimal power loss and improved efficiency when the device is conducting.
4. Applications: Commonly used in power management, motor control, and switching power supplies due to its efficiency and reliability.
Before using the FDPF33N25T, it is crucial to consult its datasheet for detailed specifications and application guidelines to ensure it meets the requirements of your circuit design.
Key Features:
1. N-Channel MOSFET: It allows current to flow when a positive voltage is applied to the gate terminal relative to the source.
2. Voltage and Current Ratings: It typically has a high voltage and current rating, enabling it to handle substantial loads. Specific ratings can be checked in the datasheet.
3. Low On-Resistance: This ensures minimal power loss and improved efficiency when the device is conducting.
4. Applications: Commonly used in power management, motor control, and switching power supplies due to its efficiency and reliability.
Before using the FDPF33N25T, it is crucial to consult its datasheet for detailed specifications and application guidelines to ensure it meets the requirements of your circuit design.
Equivalent
The FDPF33N25T is an N-channel MOSFET used in power management applications. Equivalent products could include similar N-channel MOSFETs with comparable voltage and current ratings, such as the IRFP250 from Infineon, STP25N25 from STMicroelectronics, or the FQP27P06 from ON Semiconductor. When selecting an equivalent, ensure the specifications match in terms of voltage, current, Rds(on), and package type. Always consult the datasheets for precise comparison.
Features
The FDPF33N25T is a N-channel MOSFET that is designed for high-efficiency switching applications. Here are some key features:
1. Voltage and Current Ratings: The device is capable of handling a drain-source voltage (V_DS) of up to 250V and a continuous drain current (I_D) of 33A, making it suitable for medium to high power applications.
2. R_DS(on): It has a relatively low on-resistance, which means it can efficiently conduct current with minimal power loss.
3. Package Type: It is typically available in a TO-220 package, providing ease of mounting and good thermal performance.
4. Thermal Characteristics: The design of the MOSFET allows for effective heat dissipation, which is critical for maintaining performance over longer periods and under heavier loads.
5. Applications: Commonly used in power supplies, motor controllers, and other applications where efficient load switching is required.
6. Efficiency: The device is designed for high-speed switching, reducing switching losses and improving the efficiency of power management systems.
These features make the FDPF33N25T suitable for a variety of applications requiring reliable and efficient power handling.
1. Voltage and Current Ratings: The device is capable of handling a drain-source voltage (V_DS) of up to 250V and a continuous drain current (I_D) of 33A, making it suitable for medium to high power applications.
2. R_DS(on): It has a relatively low on-resistance, which means it can efficiently conduct current with minimal power loss.
3. Package Type: It is typically available in a TO-220 package, providing ease of mounting and good thermal performance.
4. Thermal Characteristics: The design of the MOSFET allows for effective heat dissipation, which is critical for maintaining performance over longer periods and under heavier loads.
5. Applications: Commonly used in power supplies, motor controllers, and other applications where efficient load switching is required.
6. Efficiency: The device is designed for high-speed switching, reducing switching losses and improving the efficiency of power management systems.
These features make the FDPF33N25T suitable for a variety of applications requiring reliable and efficient power handling.
Pinout
The FDPF33N25T is a N-channel MOSFET manufactured by ON Semiconductor. It features a TO-220 package, which typically has a 3-pin configuration. The pins and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is turned on or off.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is in the "on" state. It is connected to the load.
3. Source (S): This pin is the terminal through which the current exits the MOSFET.
The FDPF33N25T is designed for high-efficiency power switching applications and can handle a drain-source voltage up to 250V and a continuous drain current up to 33A.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate determines whether the MOSFET is turned on or off.
2. Drain (D): This pin is the terminal through which the main current flows when the MOSFET is in the "on" state. It is connected to the load.
3. Source (S): This pin is the terminal through which the current exits the MOSFET.
The FDPF33N25T is designed for high-efficiency power switching applications and can handle a drain-source voltage up to 250V and a continuous drain current up to 33A.
Manufacturer
The FDPF33N25T is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a semiconductor company that designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. The company serves various applications in automotive, industrial, cloud, medical, and military/aerospace markets. Onsemi is recognized for its focus on energy-efficient electronics and solutions that help in reducing global energy use.
Application
The FDPF33N25T is a power MOSFET commonly used in various applications due to its efficient switching and low conduction losses. Key application areas include:
1. Switching Power Supplies: Utilized for its fast switching capabilities and efficiency.
2. Motor Drives: Suitable for controlling motors in industrial and consumer electronics.
3. DC-DC Converters: Used in voltage regulation and conversion circuits.
4. Battery Management Systems: Helps in efficient charging and discharging cycles.
5. Inverters: Applied in solar inverters and uninterruptible power supplies (UPS) for converting DC to AC power.
These applications benefit from its high power handling, reliability, and efficiency.
1. Switching Power Supplies: Utilized for its fast switching capabilities and efficiency.
2. Motor Drives: Suitable for controlling motors in industrial and consumer electronics.
3. DC-DC Converters: Used in voltage regulation and conversion circuits.
4. Battery Management Systems: Helps in efficient charging and discharging cycles.
5. Inverters: Applied in solar inverters and uninterruptible power supplies (UPS) for converting DC to AC power.
These applications benefit from its high power handling, reliability, and efficiency.
Package
The FDPF33N25T is a power MOSFET packaged in a TO-220, which is a through-hole package type commonly used for discrete semiconductors. It has three pins and a metal tab for mounting and heat dissipation.
