FDS6612A

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FDS6612A

+BOM

MOSFET N-CH 30V 8.4A 8SOIC

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Specifications

Attribute Value
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 8.4A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 22mOhm @ 8.4A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 7.6 nC @ 5 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 560 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Overview

Description

FDS6612A is a course that focuses on advanced food science and technology, often offered at the graduate level. It typically covers in-depth topics such as food processing techniques, preservation methods, food safety regulations, and the development of new food products. The course is designed to equip students with the knowledge and skills necessary to innovate and improve in the food industry.
Key areas of study may include the chemistry of food components, the impact of processing on nutritional quality, and the application of biotechnology in food production. Students often engage in both theoretical learning and practical laboratory work to gain a comprehensive understanding of the subject.
The course might also explore contemporary issues in the food industry, such as sustainability, ethical considerations, and emerging technologies. FDS6612A is suitable for students pursuing careers in food science, quality assurance, or research and development within the food sector. Pre-requisites may include foundational courses in food science or related disciplines to ensure students are prepared for the advanced content.

Equivalent

The FDS6612A is a dual N-channel MOSFET. Equivalent products may include:
1. NXP PMN60XN.
2. Fairchild FDS9926A.
3. Vishay Si4936DY.
4. ON Semiconductor NTMFS4935NT1G.
These alternatives have similar electrical characteristics, but it's important to verify the specifications like voltage, current ratings, Rds(on), and package type to ensure compatibility with your application.

Features

The FDS6612A is a MOSFET transistor commonly used in electronic applications. Here are its key features:
1. Configuration: N-channel MOSFET, which facilitates efficient switching and amplification.

2. Low On-Resistance: Features low R_DS(on), enhancing performance by reducing power loss and improving efficiency.

3. Voltage and Current Ratings: Typical ratings include a maximum drain-source voltage (V_DS) of about 20V and a continuous drain current (I_D) capacity that can vary but often around 6A, depending on packaging and condition.

4. Gate Threshold Voltage: Designed with a gate threshold voltage (V_GS(th)) usually around 1-3V, allowing for low-voltage operation.

5. Fast Switching: Provides high-speed switching performance, which is beneficial in applications like DC-DC converters and power management systems.

6. Package: Commonly available in surface-mount packages, such as SO-8, allowing for compact and efficient board space utilization.

7. Thermal Performance: Designed to handle thermal dissipation effectively, often with a specified junction-to-ambient thermal resistance.
These features make the FDS6612A suitable for various applications in power management, switching regulators, and load switching.

Pinout

The FDS6612A is a dual N-channel MOSFET. It typically comes in an SO-8 package, which features 8 pins. The primary function of this MOSFET is to switch and amplify electronic signals in various applications, such as power management in portable and battery-powered devices.
Here is a brief description of its pin configuration:
- Pins 1, 2, 3 (Source 1): These pins are connected to the source of the first MOSFET.
- Pin 4 (Gate 1): This pin controls the gate of the first MOSFET.
- Pin 5 (Gate 2): This pin controls the gate of the second MOSFET.
- Pins 6, 7, 8 (Source 2): These pins are connected to the source of the second MOSFET.
- Middle Tab (Drain): The drain pins of both the MOSFETs are internally connected and typically exposed as a tab on the underside of the package.
This dual MOSFET structure allows for efficient switching and low on-resistance, making it suitable for high-speed and low-voltage applications.

Manufacturer

The FDS6612A is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading supplier in the semiconductor industry. They focus on designing and manufacturing a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. These components are crucial for various applications such as automotive, industrial, computing, consumer electronics, and communications. The company is known for its innovation and reliability in providing energy-efficient solutions.

Application

The FDS6612A is a power MOSFET commonly used in various applications due to its efficiency and performance. Key application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation modules.
2. Switching Circuits: Effective in high-speed switching applications.
3. Load Switches: Utilized in battery-powered devices for load control.
4. Motor Drives: Suitable for controlling motors in consumer electronics.
5. LED Drivers: Employed in driving LED lighting systems due to its efficiency.
6. Automotive Applications: Used in electronic control units and other in-vehicle systems.
Its low on-resistance and fast switching speed make it ideal for these applications.

Package

The FDS6612A is a MOSFET that comes in an SO-8 package, which is a standard surface-mount package with eight pins.

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