Images are for reference only
FDS6680
+BOMMOSFET N-CH 30V 11.5A 8SOIC
-
Manufactureronsemi
-
Mfr. Part #FDS6680
-
In Stock16414
365 Days Quality Guarantee
7*24 hours service quarantee
90-day after-sales guarantee
Genuine Product Guarantee
Specifications
| Attribute | Value |
| Series | PowerTrench® |
| PartStatus | Obsolete |
| BaseProductNumber | FDS66 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 11.5A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 10mOhm @ 11.5A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 27 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2070 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Tape & Reel (TR) |
Overview
Description
FDS6680 is a power MOSFET (N-channel, enhancement mode) from Fairchild/On Semiconductor. It serves as a switching element in power electronics such as DC-DC converters, synchronous buck regulators, motor drivers, and load-switch circuits. The device is designed for relatively low on-resistance and fast switching to boost efficiency in high-frequency applications, with gate-drive compatibility for logic-level signals on many variants. Packaging is suited for surface-mount boards. Key figures to check are Vds (drain–source voltage), Id (continuous drain current), Rds(on), switching characteristics, and thermal performance. Because “FDS6680” may refer to different variants, always consult the exact datasheet for the specific part you’re using. If you share the variant or intended application, I can provide precise specs and usage guidance.
Pinout
- Pin count: 6 pins
- Function: Dual N-channel enhancement-mode MOSFETs in a single package (two MOSFETs with separate gates: G1, D1, S1 and G2, D2, S2). Used for power switching (low-side/high-side) in DC-DC converters and load-switching applications.
- Function: Dual N-channel enhancement-mode MOSFETs in a single package (two MOSFETs with separate gates: G1, D1, S1 and G2, D2, S2). Used for power switching (low-side/high-side) in DC-DC converters and load-switching applications.
Manufacturer
- Manufacturer: Fairchild Semiconductor (now part of ON Semiconductor).
- What kind of company: A semiconductor company that designs and manufactures electronic components such as ICs, transistors, diodes, and other silicon devices.
- What kind of company: A semiconductor company that designs and manufactures electronic components such as ICs, transistors, diodes, and other silicon devices.
Application
FDS6680 is a power MOSFET used in a variety of switching and power-management roles, including:
- Switching regulators (DC-DC converters) and synchronous rectification
- High-side/low-side load switches and hot-swap protection
- Motor drive circuits (BLDC and DC motors)
- Battery management and protection circuits
- Automotive power electronics and body-control modules
- Renewable-energy interfaces (solar inverters, MPPT stages)
- General power-management in servers, telecom, and consumer electronics
- Switching regulators (DC-DC converters) and synchronous rectification
- High-side/low-side load switches and hot-swap protection
- Motor drive circuits (BLDC and DC motors)
- Battery management and protection circuits
- Automotive power electronics and body-control modules
- Renewable-energy interfaces (solar inverters, MPPT stages)
- General power-management in servers, telecom, and consumer electronics
Package
8-pin SO-8 surface-mount package.
