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FDS6690AS
+BOMMOSFET N-CH 30V 10A 8SOIC
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Manufactureronsemi
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Mfr. Part #FDS6690AS
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Datasheet FDS6690AS DataSheet
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In Stock6211
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Specifications
| Attribute | Value |
| Series | PowerTrench®, SyncFET™ |
| PartStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 10A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@Id,Vgs | 12mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3V @ 1mA |
| GateCharge(Qg)(Max)@Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 910 pF @ 15 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SOIC |
| Package/Case | 8-SOIC (0.154", 3.90mm Width) |
| BaseProductNumber | FDS6690 |
Overview
Description
Key specifications typically include a maximum continuous drain current, a wide operating temperature range, and low gate threshold voltage, which enhances its efficiency and thermal performance. The FDS6690AS is often utilized in consumer electronics, automotive applications, and various industrial systems due to its reliability and effectiveness in handling high power levels.
With its robust design and favorable electrical characteristics, the FDS6690AS plays a crucial role in improving the efficiency and performance of modern electronic devices.
Equivalent
Features
1. Low On-Resistance: Ensures efficient operation with minimal power loss, enhancing performance in power applications.
2. High-Speed Switching: Facilitates rapid switching, making it suitable for high-frequency applications, such as DC-DC converters.
3. Thermal Performance: Designed with good thermal conductivity, allowing for effective heat dissipation and improved reliability.
4. Voltage Rating: Capable of handling high voltages, typically up to 30V.
5. Package Type: Available in a compact SO-8 package, optimizing space in circuit designs.
6. Gate Threshold Voltage: Features a low gate threshold voltage, making it easy to turn on with standard logic levels.
7. Ruggedness: Designed to withstand high stress, making it suitable for automotive and industrial applications.
These features make the FDS6690AS an ideal choice for efficient power management and switching solutions in various electronic applications.
Pinout
Pin Configuration:
1. Gate 1 (G1) - Control signal for the first N-channel MOSFET.
2. Source 1 (S1) - Connects to the source terminal of the first MOSFET.
3. Drain 1 (D1) - Connects to the drain terminal of the first MOSFET.
4. Gate 2 (G2) - Control signal for the second N-channel MOSFET.
5. Source 2 (S2) - Connects to the source terminal of the second MOSFET.
6. Drain 2 (D2) - Connects to the drain terminal of the second MOSFET.
7. Drain 1 (D1) - Common drain for both MOSFETs.
8. Source (S) - Common source for both MOSFETs.
The FDS6690AS is designed for high-speed switching and has low on-resistance, making it suitable for applications requiring efficient power management.
Manufacturer
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and now operates globally, providing essential components that support modern electronic designs and applications across diverse markets.
Application
1. DC-DC Converters: Used in step-down (buck) or step-up (boost) converters for efficient voltage regulation.
2. Load Switching: Ideal for switching applications in power supplies, LED drivers, and motor controls.
3. Power Management ICs: Integrated in devices requiring low on-resistance and fast switching.
4. Battery Management Systems: Used to enhance charging and discharging efficiency.
5. Consumer Electronics: Employed in smartphones, tablets, and laptops for efficient power distribution.
Its low R_DS(on) and high-speed performance make it suitable for these applications.