FDS6900AS-G

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FDS6900AS-G

+BOM

MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC

  • Manufactureronsemi

  • Mfr. Part #FDS6900AS-G

  • Package SOIC-8

  • In Stock6507

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Specifications

Attribute Value
Supplier Flip Electronics,onsemi
Package / Case Tape & Reel (TR),Tape & Reel (TR),Tape & Reel (TR)
Series PowerTrench®, SyncFET™
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 6.9A, 8.2A
Rds On(Max) @ Id Vgs 27mOhm @ 6.9A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA, 3V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 15nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 600pF @ 15V
Power - Max 900mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

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