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FDS8949
+BOMPOWER FIELD-EFFECT TRANSISTOR, 6
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ManufacturerFairchild Semiconductor
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Mfr. Part #FDS8949
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Datasheet FDS8949 DataSheet
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Package SOIC-8
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In Stock6681
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 40V |
| Current-ContinuousDrain(Id)@25°C | 6A |
| RdsOn(Max)@IdVgs | 29mOhm @ 6A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 955pF @ 20V |
| Power-Max | 2W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Overview
Description
Key features of the FDS8949 include low on-resistance, fast switching speeds, and high efficiency, making it suitable for applications in power management, motor control, and DC-DC converters. Its design allows for enhanced thermal performance and reliability, which are critical in demanding environments.
The device is generally housed in a small surface-mount package, facilitating integration into compact circuit designs. Its electrical characteristics—such as threshold voltage, gate capacitance, and maximum drain current—are typically specified by the manufacturer and should be carefully considered during circuit design to ensure compatibility and optimal performance.
Overall, the FDS8949 is valued in the electronics industry for its efficiency, reliability, and the ability to handle significant power levels while occupying minimal space on a circuit board.
Equivalent
1. IRF7343 by Infineon
2. Si4948DY by Vishay
3. BSS123DW by ON Semiconductor
4. NTMFS4935 by ON Semiconductor
These equivalents offer similar electrical characteristics but may vary slightly in specifications, so it's essential to verify compatibility with your specific application needs.
Features
1. Dual N-Channel Configuration: It includes two N-channel MOSFETs in a single package, allowing efficient use in compact designs.
2. Low On-Resistance: The FDS8949 offers low R_DS(on), which minimizes power dissipation and improves efficiency.
3. High Current Capability: It can handle significant current loads, suitable for applications requiring efficient power management.
4. Fast Switching Speed: The device provides fast switching capabilities, enhancing performance in high-frequency applications.
5. SO-8 Package: It comes in an SO-8 surface-mount package, which is space-saving and suitable for PCBs with limited area.
6. Thermal Performance: The packaging and design offer good thermal performance, aiding in heat dissipation.
7. Applications: Commonly used in DC-DC converters, power management systems, and load switches.
These features make the FDS8949 a versatile choice for various power management applications where efficiency and compactness are crucial.
Pinout
Key functions of the pins are as follows:
1. Drain 1 (D1): Connected to the drain of the first MOSFET.
2. Gate 1 (G1): Connected to the gate of the first MOSFET, controlling its operation.
3. Source 1 (S1): Connected to the source of the first MOSFET.
4. Source 2 (S2): Connected to the source of the second MOSFET.
5. Gate 2 (G2): Connected to the gate of the second MOSFET, controlling its operation.
6. Drain 2 (D2): Connected to the drain of the second MOSFET.
7/8. Common (S1/S2): The source pins may be internally connected to share a common source pin for both MOSFETs, depending on the specific package variant.
These dual MOSFETs are commonly used in power management and switching applications.