FGH50N3

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FGH50N3

+BOM

INSULATED GATE BIPOLAR TRANSISTO

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Specifications

Attribute Value
Supplier Rochester Electronics, LLC
Package / Case Bulk
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown(Max) 300 V
Current - Collector(Ic)(Max) 75 A
Current - Collector Pulsed(Icm) 240 A
Vce(on)(Max) @ Vge Ic 1.4V @ 15V, 30A
Power - Max 463 W
Switching Energy 130µJ (on), 92µJ (off)
Input Type Standard
Gate Charge 180 nC
Td(on / off) @ 25°C 20ns/135ns
Test Condition 180V, 30A, 5Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

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