Specifications
| Attribute | Value |
| Package / Case | Tube |
| Part Status | Active |
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 600 V |
| Current - Collector(Ic)(Max) | 120 A |
| Current - Collector Pulsed(Icm) | 180 A |
| Vce(on)(Max) @ Vge Ic | 2.5V @ 15V, 60A |
| Power - Max | 600 W |
| Switching Energy | 1.26mJ (on), 450µJ (off) |
| Input Type | Standard |
| Gate Charge | 189 nC |
| Td(on / off) @ 25°C | 18ns/104ns |
| Test Condition | 400V, 60A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 39 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
Overview
Description
The FGH60N60SMD is a specific model of an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. This device is known for its robust performance in power electronics, offering a balance between conduction and switching losses. It features a maximum collector current of 60A and a collector-emitter voltage of 600V, making it suitable for various industrial applications, including motor drives, inverters, and power supply systems.
Key characteristics of the FGH60N60SMD include low on-state voltage drop and high-speed switching capabilities, which contribute to improved efficiency and reduced energy loss in electronic systems. The device typically comes in a TO-247 package, facilitating efficient heat dissipation and ease of integration into electronic assemblies.
Overall, the FGH60N60SMD is valued for its reliability, efficiency, and performance in demanding electrical environments, providing a cost-effective solution for power management and energy conversion applications.
Key characteristics of the FGH60N60SMD include low on-state voltage drop and high-speed switching capabilities, which contribute to improved efficiency and reduced energy loss in electronic systems. The device typically comes in a TO-247 package, facilitating efficient heat dissipation and ease of integration into electronic assemblies.
Overall, the FGH60N60SMD is valued for its reliability, efficiency, and performance in demanding electrical environments, providing a cost-effective solution for power management and energy conversion applications.
Equivalent
The FGH60N60SMD is a 600V, 60A Insulated Gate Bipolar Transistor (IGBT). Equivalent products might include:
1. Infineon IKW60N60H3 - Similar voltage and current ratings.
2. STMicroelectronics STGW60H60DF - Comparable specifications.
3. ON Semiconductor FGA60N60SMD - Shares similar characteristics.
4. IXYS IXTN60N60L2 - Alternative with similar ratings.
Always verify with datasheets to ensure compatibility regarding switching speed, power dissipation, and package type.
1. Infineon IKW60N60H3 - Similar voltage and current ratings.
2. STMicroelectronics STGW60H60DF - Comparable specifications.
3. ON Semiconductor FGA60N60SMD - Shares similar characteristics.
4. IXYS IXTN60N60L2 - Alternative with similar ratings.
Always verify with datasheets to ensure compatibility regarding switching speed, power dissipation, and package type.
Features
The FGH60N60SMD is a semiconductor device known for its efficient performance in high-power applications. Key features include:
1. Voltage and Current Ratings: It typically has a collector-emitter voltage rating of 600V and a continuous collector current rating of 60A, making it suitable for high-voltage and high-current applications.
2. Switching Characteristics: The device is designed for fast switching, which enhances efficiency in power conversion and reduces energy loss.
3. Thermal Performance: It often includes robust thermal management features, such as low thermal resistance, which improve heat dissipation and stability under load.
4. Low Saturation Voltage: This feature reduces power loss during operation, thereby improving overall system efficiency.
5. Rugged Construction: The FGH60N60SMD is built to withstand challenging conditions, offering high reliability in demanding environments.
These features make it suitable for use in applications such as power inverters, motor drives, and other high-power switching operations.
1. Voltage and Current Ratings: It typically has a collector-emitter voltage rating of 600V and a continuous collector current rating of 60A, making it suitable for high-voltage and high-current applications.
2. Switching Characteristics: The device is designed for fast switching, which enhances efficiency in power conversion and reduces energy loss.
3. Thermal Performance: It often includes robust thermal management features, such as low thermal resistance, which improve heat dissipation and stability under load.
4. Low Saturation Voltage: This feature reduces power loss during operation, thereby improving overall system efficiency.
5. Rugged Construction: The FGH60N60SMD is built to withstand challenging conditions, offering high reliability in demanding environments.
These features make it suitable for use in applications such as power inverters, motor drives, and other high-power switching operations.
Pinout
The FGH60N60SMD is an Insulated Gate Bipolar Transistor (IGBT) commonly used in various power electronic applications due to its efficiency and fast switching capabilities. It typically comes in a TO-247 package, which is a standard type of transistor package.
This IGBT has three pins:
1. Collector (C): This pin is the main terminal through which the current flows when the transistor is in the "on" state.
2. Gate (G): This pin controls the operation of the IGBT. A voltage applied to the gate controls the flow of current between the collector and the emitter.
3. Emitter (E): This is the terminal through which the controlled current exits the transistor when it is in operation.
The FGH60N60SMD is designed for high-speed switching and is capable of handling relatively high voltages and currents, typically used in applications like motor drives, inverters, and power supply circuits.
This IGBT has three pins:
1. Collector (C): This pin is the main terminal through which the current flows when the transistor is in the "on" state.
2. Gate (G): This pin controls the operation of the IGBT. A voltage applied to the gate controls the flow of current between the collector and the emitter.
3. Emitter (E): This is the terminal through which the controlled current exits the transistor when it is in operation.
The FGH60N60SMD is designed for high-speed switching and is capable of handling relatively high voltages and currents, typically used in applications like motor drives, inverters, and power supply circuits.
Manufacturer
The FGH60N60SMD is manufactured by ON Semiconductor. ON Semiconductor is a company that specializes in the design, development, and supply of semiconductor components. These components are used in various electronic systems and devices, providing essential functions such as power management, signal processing, and connectivity. ON Semiconductor serves a wide range of industries, including automotive, industrial, consumer electronics, and communications. The company focuses on delivering energy-efficient solutions that help reduce energy consumption and improve the performance and reliability of electronic devices.
Application
The FGH60N60SMD is an Insulated Gate Bipolar Transistor (IGBT) often used in applications requiring high efficiency and fast switching. Key areas include:
1. Power Inverters: Used in solar energy systems and motor drives for efficient energy conversion.
2. Motor Control: Essential for industrial motor drives, providing precise control and efficiency.
3. Switch Mode Power Supplies: Utilized in power supply units for its fast switching capabilities.
4. Uninterruptible Power Supplies (UPS): Ensures reliable power backup by efficiently managing energy flow.
5. Welding Equipment: Offers high power handling and reliability for industrial welding applications.
These applications benefit from the IGBT's ability to handle high voltage and current efficiently.
1. Power Inverters: Used in solar energy systems and motor drives for efficient energy conversion.
2. Motor Control: Essential for industrial motor drives, providing precise control and efficiency.
3. Switch Mode Power Supplies: Utilized in power supply units for its fast switching capabilities.
4. Uninterruptible Power Supplies (UPS): Ensures reliable power backup by efficiently managing energy flow.
5. Welding Equipment: Offers high power handling and reliability for industrial welding applications.
These applications benefit from the IGBT's ability to handle high voltage and current efficiently.
Package
The FGH60N60SMD is an IGBT (Insulated Gate Bipolar Transistor) and typically comes in a TO-247 package. This package type is known for its suitability in high-power applications and offers efficient heat dissipation due to its larger size compared to smaller package types.
