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FJV4102RMTF
+BOMTRANS PREBIAS PNP 200MW SOT23-3
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Manufactureronsemi
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Mfr. Part #FJV4102RMTF
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Datasheet FJV4102RMTF DataSheet
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Package TO-236-3
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In Stock2942
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Specifications
| Attribute | Value |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Obsolete |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Resistor - Base(R1) | 10 kOhms |
| Resistor - Emitter Base(R2) | 10 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 30 @ 5mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| Frequency - Transition | 200 MHz |
| Power - Max | 200 mW |
| Mounting Type | Surface Mount |
