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FM1808B-SG
+BOMIC FRAM 256KBIT PARALLEL 28SOIC
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ManufacturerCypress Semiconductor Corp
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Mfr. Part #FM1808B-SG
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Datasheet FM1808B-SG DataSheet
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Package SOIC-28
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In Stock7199
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Specifications
| Attribute | Value |
| Package / Case | Tube |
| Series | F-RAM™ |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 256Kb (32K x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 130ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Overview
Description
Equivalent
1. FM24C256 - Another FRAM product with similar non-volatile features.
2. MB85R256F - Fujitsu's FRAM with similar capacity and characteristics.
3. Cypress CY15B104Q - Offers similar non-volatile memory solutions.
4. Adesto Technologies' RM24C256C - EEPROM, providing similar storage functionalities.
These alternatives offer similar non-volatile memory features but may differ in specifications like density, package, and interface. Always check compatibility before substituting.
Features
1. Capacity: Typically available in kilobit or megabit capacities, providing ample storage for various applications.
2. Speed: Fast read/write cycles, often comparable to DRAM, with no need for pre-charge or refresh cycles.
3. Endurance: Supports high write endurance, often in the range of 10^14 read/write cycles, ensuring longevity.
4. Data Retention: Non-volatile, capable of retaining data for over 10 years without power.
5. Low Power Consumption: Efficient power usage, suitable for battery-powered applications.
6. Interface: Supports standard industry interfaces, such as SPI or parallel interfaces, for easy integration.
7. Package: Available in compact packages suitable for space-constrained applications.
These features make the FM1808B-SG ideal for applications requiring high-speed data processing and reliable non-volatile storage, such as in embedded systems, industrial control, and consumer electronics.
Pinout
1. Address Pins (A0–A11): These 12 pins are used to address the 4096 locations within the memory.
2. Data Pins (DQ0–DQ7): These 8 pins are used for data input and output.
3. Chip Enable (CE): Activates the chip when low.
4. Write Enable (WE): Controls writing operations to the memory.
5. Output Enable (OE): Enables the output buffer when low.
6. VCC: Power supply pin.
7. VSS: Ground pin.
These pins are integral for read, write, and data transfer operations, enabling the FM1808B-SG to function as a low-power memory solution with fast write capabilities and non-volatility.