Specifications
| Attribute | Value |
| Package | Tube |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 300 V |
| Current-ContinuousDrain(Id)@25°C | 38.4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 85mOhm @ 19.2A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 120 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 4400 pF @ 25 V |
| PowerDissipation(Max) | 290W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3P |
Overview
Description
The FQA38N30 is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It is produced by Fairchild Semiconductor, which is now part of ON Semiconductor. This component is notable for its N-channel configuration and is typically used in applications requiring high-speed switching and low on-resistance.
Key specifications include a drain-source voltage (V_DS) of 300V, a continuous drain current (I_D) of 38A, and a low on-resistance (R_DS(on)) of approximately 0.06 ohms. The FQA38N30 is encapsulated in a TO-3P package, which is suitable for handling significant power dissipation due to its robust construction.
Common applications include power supplies, motor drives, and other circuits needing efficient voltage regulation and switching. The device's high voltage and current capabilities, combined with its efficient thermal performance, make it ideal for use in demanding environments where performance and reliability are critical.
Key specifications include a drain-source voltage (V_DS) of 300V, a continuous drain current (I_D) of 38A, and a low on-resistance (R_DS(on)) of approximately 0.06 ohms. The FQA38N30 is encapsulated in a TO-3P package, which is suitable for handling significant power dissipation due to its robust construction.
Common applications include power supplies, motor drives, and other circuits needing efficient voltage regulation and switching. The device's high voltage and current capabilities, combined with its efficient thermal performance, make it ideal for use in demanding environments where performance and reliability are critical.
Equivalent
The FQA38N30 is an N-channel MOSFET. Equivalent products include:
1. IRFP260N
2. STP30NF10
3. FDP33N25
4. HUF75339P3
5. IXFH48N30
These equivalents should be verified for specific circuit requirements, as variations in parameters like threshold voltage, current capability, and package type can affect performance. Always consult the datasheets for detailed specifications.
1. IRFP260N
2. STP30NF10
3. FDP33N25
4. HUF75339P3
5. IXFH48N30
These equivalents should be verified for specific circuit requirements, as variations in parameters like threshold voltage, current capability, and package type can affect performance. Always consult the datasheets for detailed specifications.
Features
The FQA38N30 is a N-channel MOSFET designed for high-efficiency power management applications. Here are its key features:
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 300V and can handle a continuous drain current (I_D) of 38A.
2. R_DS(on) Resistance: It has a low on-resistance, which is typically around 75 mΩ, minimizing power loss and heat generation during operation.
3. Fast Switching: The device is designed for fast switching speeds that enhance efficiency in power conversion applications.
4. Thermal Performance: It features superior thermal characteristics, helping to manage heat dissipation effectively during high-power operations.
5. Packaging: Typically available in TO-220 or similar packages, facilitating easy mounting and heat sink attachment for enhanced thermal management.
6. Applications: Suitable for use in applications such as power supplies, motor controllers, and various switching devices.
These features make the FQA38N30 a versatile and efficient choice for designers looking to optimize power handling and efficiency in electronic circuits.
1. Voltage and Current Ratings: It supports a maximum drain-source voltage (V_DS) of 300V and can handle a continuous drain current (I_D) of 38A.
2. R_DS(on) Resistance: It has a low on-resistance, which is typically around 75 mΩ, minimizing power loss and heat generation during operation.
3. Fast Switching: The device is designed for fast switching speeds that enhance efficiency in power conversion applications.
4. Thermal Performance: It features superior thermal characteristics, helping to manage heat dissipation effectively during high-power operations.
5. Packaging: Typically available in TO-220 or similar packages, facilitating easy mounting and heat sink attachment for enhanced thermal management.
6. Applications: Suitable for use in applications such as power supplies, motor controllers, and various switching devices.
These features make the FQA38N30 a versatile and efficient choice for designers looking to optimize power handling and efficiency in electronic circuits.
Pinout
The FQA38N30 is an N-channel MOSFET. It typically comes in a TO-3P package, which is a type of through-hole package. The pin configuration for the FQA38N30 is as follows:
1. Pin 1 (Gate): This pin is used to control the MOSFET. It receives the voltage signal that turns the MOSFET on or off.
2. Pin 2 (Drain): This is one of the main current-carrying terminals. In the circuit, the drain is connected to the load.
3. Pin 3 (Source): This is the other main current-carrying terminal. It is typically connected to ground or the return path of the circuit.
The FQA38N30 is used in applications that require high power handling and efficiency, such as power supplies, motor drivers, and amplifiers. It is known for its high current capacity and fast switching speed.
1. Pin 1 (Gate): This pin is used to control the MOSFET. It receives the voltage signal that turns the MOSFET on or off.
2. Pin 2 (Drain): This is one of the main current-carrying terminals. In the circuit, the drain is connected to the load.
3. Pin 3 (Source): This is the other main current-carrying terminal. It is typically connected to ground or the return path of the circuit.
The FQA38N30 is used in applications that require high power handling and efficiency, such as power supplies, motor drivers, and amplifiers. It is known for its high current capacity and fast switching speed.
Manufacturer
The FQA38N30 is a type of power MOSFET, and it is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor supplier that specializes in designing and manufacturing a wide range of semiconductor components. These components are used in various applications, including automotive, industrial, computing, consumer electronics, and communications. onsemi focuses on providing energy-efficient solutions to help reduce energy consumption and support sustainable technology development.
Application
The FQA38N30 is an N-channel MOSFET commonly used in various electronic applications. Its primary application areas include:
1. Power Management: Utilized in power supply circuits and converters due to its high efficiency and fast switching capabilities.
2. Motor Control: Employed in motor drivers and controllers for automotive and industrial applications.
3. Switching Circuits: Used in switching applications like relay replacement and solenoid control.
4. Amplification: Serves in audio and RF amplifiers for signal processing.
5. Inverters: Applied in inverter circuits for renewable energy systems such as solar power systems.
Overall, its robustness and efficiency make it suitable for high-power and high-frequency applications.
1. Power Management: Utilized in power supply circuits and converters due to its high efficiency and fast switching capabilities.
2. Motor Control: Employed in motor drivers and controllers for automotive and industrial applications.
3. Switching Circuits: Used in switching applications like relay replacement and solenoid control.
4. Amplification: Serves in audio and RF amplifiers for signal processing.
5. Inverters: Applied in inverter circuits for renewable energy systems such as solar power systems.
Overall, its robustness and efficiency make it suitable for high-power and high-frequency applications.
Package
The FQA38N30 is typically available in a TO-3P package, which is a through-hole type designed for high power dissipation.
