FQB27P06TM

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FQB27P06TM

+BOM

POWER FIELD-EFFECT TRANSISTOR, 2

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Specifications

Attribute Value
Package / Case Bulk
Series QFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 27A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 70mOhm @ 13.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 43 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 1400 pF @ 25 V
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)

Overview

Description

"Introduction to FQB27P06TM" likely refers to a specific product, model, or component, though the code itself doesn’t provide explicit details. It could be related to electronics, machinery, software, or another technical field. Without additional context, it's challenging to provide a detailed description.
Typically, such a designation might be used in technical specifications or product documentation. If FQB27P06TM is a part number for an electronic component, for example, it might represent a specific type of transistor, microchip, or other component with distinct electrical characteristics suitable for use in various applications like power management or signal processing.
For accurate information, consulting a datasheet or manufacturer's documentation would be necessary. These documents provide detailed information about the component's features, specifications, usage instructions, and applications. If you need specific details about FQB27P06TM, please refer to the manufacturer's resources or specify the context in which this model number is used.

Equivalent

The FQB27P06TM is a P-channel MOSFET with specific characteristics. Equivalent products might include:
1. IRF9540
2. FQP27P06
3. IRF9530
4. STP20P06
5. NTP2955
These equivalents should be checked for matching electrical parameters like drain-source voltage, continuous drain current, and package type to ensure compatibility with your application. Always refer to the datasheets for precise specifications.

Features

The FQB27P06TM is a P-channel MOSFET commonly used in electronic applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of -60V.
2. Current Rating: It supports a continuous drain current (I_D) of -27A at 25°C.
3. R_DS(on): The on-state resistance is typically low, around 0.06 ohms, which helps in efficient power management.
4. Gate-Source Voltage: It has a maximum gate-source voltage (V_GS) of ±20V.
5. Package Type: The component is available in a TO-220 package, making it suitable for through-hole mounting.
6. Temperature Range: It operates within a temperature range of -55°C to 175°C, making it versatile for various environments.
7. Applications: It's often used in applications such as power management, DC-DC converters, and load switch circuits.
These features make the FQB27P06TM suitable for applications requiring efficient switching and low power loss in power management systems.

Pinout

The FQB27P06TM is a P-channel MOSFET transistor. It typically comes in a TO-263 package, also known as D2PAK, which generally features three pins. Here’s a brief description of its pin configuration and function:
1. Pin 1 (Gate): This pin is used to control the MOSFET. Applying a voltage to the gate controls the flow of current between the source and drain.
2. Pin 2 (Drain): The drain is where the current flows out of the MOSFET. It’s connected to one side of the load that the MOSFET is controlling.
3. Pin 3 (Source): This pin is where the current enters the MOSFET. It’s typically connected to the power supply in a circuit.
The FQB27P06TM is used for switching and amplification in various applications. It can handle significant power levels due to its low on-resistance and high current capacity. As a P-channel MOSFET, it turns on when the gate-to-source voltage is negative, making it suitable for high-side switching applications.

Manufacturer

The FQB27P06TM is a P-channel MOSFET manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a prominent American semiconductor supplier company. It specializes in innovative energy-efficient electronics that help reduce global energy use. The company provides a broad portfolio of products, including power and signal management, logic, discrete, and custom devices for the automotive, communications, computing, consumer, industrial, medical, and military/aerospace applications. onsemi is known for its focus on energy-efficient, high-performance semiconductors that drive and enable sustainable energy and advanced safety solutions across multiple industries.

Application

The FQB27P06TM is a P-channel MOSFET commonly used in various electronic applications. Its application areas include:
1. Power Management: Utilized in power supply circuits for efficient voltage regulation and switching.
2. Motor Control: Employed in motor driver circuits to control and drive motors in automotive and industrial applications.
3. Load Switching: Used in switching applications for controlling large loads with minimal input power.
4. DC-DC Converters: Integrated into DC-DC converter circuits for efficient energy conversion.
5. Battery Protection: Serves in battery management systems to prevent overcharging and over-discharging.
6. Consumer Electronics: Applied in various devices for power handling and switching functions.
These characteristics make it versatile for a range of power-related applications.

Package

The package type for the FQB27P06TM is D-PAK (also known as TO-252), which is a surface-mount package commonly used for power devices like MOSFETs.

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