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FQB8P10TM
+BOMPOWER FIELD-EFFECT TRANSISTOR, 8
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ManufacturerFairchild Semiconductor
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Mfr. Part #FQB8P10TM
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Datasheet FQB8P10TM DataSheet
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Package TO-263-3
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In Stock4181
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 530mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 470 pF @ 25 V |
| PowerDissipation(Max) | 3.75W (Ta), 65W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D2PAK (TO-263) |
Overview
Description
The introduction to this component would typically cover its primary functions, technical specifications, applications, and advantages over similar products. It might also include guidance on integration, usage, and potential industry standards or certifications. If FQB8P10TM is part of a larger system or product line, understanding its role within that context is crucial for effective implementation.
For precise information, consulting the manufacturer's datasheet or technical documentation would be essential, as such resources provide comprehensive details tailored to the device or module's intended use.
Equivalent
1. IRF9540N - by Infineon
2. RFP30P06 - by ON Semiconductor
3. STP40P10 - by STMicroelectronics
4. FQP27P06 - by ON Semiconductor
5. IPP80P03P4L-04 - by Infineon
These equivalents have similar voltage and current ratings, but always verify specific parameters and package compatibility for your application.
Features
1. Voltage Rating: It can handle a drain-source voltage (V_ds) of up to -100V.
2. Current Rating: The continuous drain current (I_d) is rated at approximately -8A at 25°C, meaning it can handle relatively high current loads.
3. RDS(on): The on-state resistance (RDS(on)) is typically low, which ensures efficient current flow with minimal losses when the MOSFET is in the 'on' state.
4. Gate Threshold Voltage: It has a relatively low gate threshold voltage, which facilitates easy drive by low-voltage logic levels.
5. Package: Often available in a TO-252 (DPAK) surface-mount package, aiding in compact and efficient PCB designs.
6. Thermal Performance: It provides good thermal performance, suitable for applications requiring reliable heat dissipation.
These features make the FQB8P10TM suitable for applications like power management, switching regulators, and load switches.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching state. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is where the main current flows out when the MOSFET is conducting. It's typically connected to the load in a circuit.
3. Source (S): This pin is connected to the source voltage for the MOSFET. Current flows from the source to the drain when the MOSFET is on.
The FQB8P10TM is designed for use in various power applications, leveraging its capability to handle significant current and voltage levels effectively. Always refer to the datasheet for specific electrical characteristics and application guidelines.
Manufacturer
Application
1. Power Management: Used in power supply circuits for efficient switching and regulation.
2. Load Switching: Suitable for switching loads in battery-operated devices due to its low on-resistance.
3. Motor Control: Employed in driving motors in automotive and industrial applications.
4. DC-DC Converters: Utilized in step-down and step-up converters for voltage regulation.
5. Battery Protection: Helps in overcurrent and overvoltage protection in battery management systems.
6. Analog and Digital Circuits: Used in both analog and digital signal processing circuits for switching tasks.
These applications leverage the MOSFET’s efficient switching capabilities and low power loss characteristics.