FQD12N20TM

Images are for reference only

FQD12N20TM

+BOM

MOSFET N-CH 200V 9A DPAK

  • Manufactureronsemi

  • Mfr. Part #FQD12N20TM

  • In Stock21839

365 Days Quality Guarantee

7*24 hours service quarantee

90-day after-sales guarantee

Genuine Product Guarantee

Specifications

Attribute Value
Series QFET®
Part Status Obsolete
Base Product Number FQD12N20
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 55W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tape & Reel (TR)