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FQD5N60CTM
+BOMMOSFET N-CH 600V 2.8A DPAK
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Manufactureronsemi
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Mfr. Part #FQD5N60CTM
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Datasheet FQD5N60CTM DataSheet
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In Stock23013
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Specifications
| Attribute | Value |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain(Id) @ 25°C | 2.8A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.5Ohm @ 1.4A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 19 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 670 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 49W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Overview
Description
The FQD5N60CTM is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various switching applications. Here are some key features:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of around 5A, making it suitable for high-voltage environments.
2. R_DS(on): This MOSFET typically has a low on-state resistance, minimizing power dissipation and improving efficiency during operation.
3. Applications: It is widely used in power supply circuits, motor drives, and lighting applications due to its efficient switching capabilities and high voltage handling.
4. Package Type: The FQD5N60CTM is commonly available in TO-220 packages, which provide effective heat dissipation through the metal tab.
5. Thermal Performance: Enhanced thermal characteristics allow it to operate efficiently under higher temperatures.
This MOSFET is valued for its balance between performance and cost, making it a common choice in both consumer and industrial electronic designs.
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 600V and a maximum continuous drain current (I_D) of around 5A, making it suitable for high-voltage environments.
2. R_DS(on): This MOSFET typically has a low on-state resistance, minimizing power dissipation and improving efficiency during operation.
3. Applications: It is widely used in power supply circuits, motor drives, and lighting applications due to its efficient switching capabilities and high voltage handling.
4. Package Type: The FQD5N60CTM is commonly available in TO-220 packages, which provide effective heat dissipation through the metal tab.
5. Thermal Performance: Enhanced thermal characteristics allow it to operate efficiently under higher temperatures.
This MOSFET is valued for its balance between performance and cost, making it a common choice in both consumer and industrial electronic designs.
Equivalent
The FQD5N60CTM is a N-channel MOSFET with specific parameters. Equivalent products would be similar N-channel MOSFETs with comparable voltage, current ratings, and package. Some equivalents include:
1. IRF730PBF
2. STP5NK60Z from STMicroelectronics
3. FDPF5N60NZ from ON Semiconductor
Always verify the datasheet for exact specifications to ensure compatibility for your application.
1. IRF730PBF
2. STP5NK60Z from STMicroelectronics
3. FDPF5N60NZ from ON Semiconductor
Always verify the datasheet for exact specifications to ensure compatibility for your application.
Features
The FQD5N60CTM is a N-channel MOSFET designed for various applications requiring fast switching and high efficiency. Here are its key features:
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 5A, making it suitable for high-voltage applications.
2. RDS(on): The on-resistance is typically low, which minimizes power loss and improves efficiency.
3. Gate Charge: It features a low gate charge, enhancing its suitability for fast switching applications and reducing drive losses.
4. Package: Available in a TO-252 package, which provides good thermal performance and efficiency.
5. Thermal Resistance: Designed with efficient thermal management properties, ensuring reliability over a wide temperature range.
6. Applications: Commonly used in power supply units, motor controls, lighting, and other high-voltage applications.
7. Reliability: Built to withstand high energy in the avalanche mode and offers robustness against electrical stress.
This combination of features makes the FQD5N60CTM a versatile component for efficient power management in electronic devices.
1. Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 5A, making it suitable for high-voltage applications.
2. RDS(on): The on-resistance is typically low, which minimizes power loss and improves efficiency.
3. Gate Charge: It features a low gate charge, enhancing its suitability for fast switching applications and reducing drive losses.
4. Package: Available in a TO-252 package, which provides good thermal performance and efficiency.
5. Thermal Resistance: Designed with efficient thermal management properties, ensuring reliability over a wide temperature range.
6. Applications: Commonly used in power supply units, motor controls, lighting, and other high-voltage applications.
7. Reliability: Built to withstand high energy in the avalanche mode and offers robustness against electrical stress.
This combination of features makes the FQD5N60CTM a versatile component for efficient power management in electronic devices.
Pinout
The FQD5N60CTM is a MOSFET transistor. It typically comes in a TO-252 package, which is designed for surface mount applications. The pin count for this package is three main pins plus the tab, which can also act as a fourth connection point for heat dissipation.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the terminal where the main current flows out. It is connected to the load.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply. It is where the main current flows into the MOSFET.
The tab is usually connected to the drain pin and is used for heat dissipation. The FQD5N60CTM is typically used in applications requiring high voltage and high-speed switching, such as power supplies and motor control circuits.
The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is the terminal where the main current flows out. It is connected to the load.
3. Source (S): This terminal is connected to the ground or the negative side of the power supply. It is where the main current flows into the MOSFET.
The tab is usually connected to the drain pin and is used for heat dissipation. The FQD5N60CTM is typically used in applications requiring high voltage and high-speed switching, such as power supplies and motor control circuits.
Manufacturer
The FQD5N60CTM is manufactured by ON Semiconductor, a company that specializes in semiconductor manufacturing. ON Semiconductor provides a wide range of products, including power and signal management, logic, discrete, and custom devices. These products are used in various applications across automotive, communications, computing, consumer, industrial, medical, and military/aerospace markets. The company is known for its focus on energy-efficient and sustainable solutions, providing the building blocks for a wide array of electronic devices and systems.
Application
The FQD5N60CTM is a N-channel MOSFET commonly used in a variety of applications due to its high voltage and current handling capabilities. Typical application areas include:
1. Switching Power Supplies: Used for efficient power conversion in AC-DC and DC-DC converters.
2. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
3. Lighting: Utilized in LED drivers and ballast circuits for efficient lighting control.
4. Battery Management: Key component in battery chargers and management systems.
5. Inverters: Applied in solar inverters and uninterruptible power supplies (UPS).
Its high-speed switching and low on-resistance make it ideal for these high-efficiency and high-reliability applications.
1. Switching Power Supplies: Used for efficient power conversion in AC-DC and DC-DC converters.
2. Motor Drives: Suitable for controlling motors in industrial and consumer applications.
3. Lighting: Utilized in LED drivers and ballast circuits for efficient lighting control.
4. Battery Management: Key component in battery chargers and management systems.
5. Inverters: Applied in solar inverters and uninterruptible power supplies (UPS).
Its high-speed switching and low on-resistance make it ideal for these high-efficiency and high-reliability applications.
Package
The FQD5N60CTM is a MOSFET with a DPAK (TO-252) package type.
