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FQPF4N90C
+BOMMOSFET N-CH 900V 4A TO220F
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Manufactureronsemi
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Mfr. Part #FQPF4N90C
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Datasheet FQPF4N90C DataSheet
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Package TO-220F-3
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In Stock3370
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Specifications
| Attribute | Value |
| Package | Bulk,Tube |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 900 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.2Ohm @ 2A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 960 pF @ 25 V |
| PowerDissipation(Max) | 47W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
Overview
Description
The FQPF4N90C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. Manufactured by Fairchild Semiconductor, it is commonly used in power electronics due to its ability to handle significant voltage and current levels. This particular MOSFET has a maximum drain-source voltage (V_DS) of 900V and a continuous drain current (I_D) of 4A, making it suitable for applications such as power supplies, converters, and motor drives.
The FQPF4N90C features a fast switching speed, which enhances efficiency in power conversion systems. It comes in a TO-220F package, offering a compact and reliable solution for both industrial and consumer electronics. Moreover, the device is equipped with an isolated mounting hole, improving thermal management by allowing better heat dissipation. This MOSFET provides a low on-resistance (R_DS(on)), which minimizes power losses and improves overall system performance. It is widely used in situations where high efficiency and reliability are critical.
The FQPF4N90C features a fast switching speed, which enhances efficiency in power conversion systems. It comes in a TO-220F package, offering a compact and reliable solution for both industrial and consumer electronics. Moreover, the device is equipped with an isolated mounting hole, improving thermal management by allowing better heat dissipation. This MOSFET provides a low on-resistance (R_DS(on)), which minimizes power losses and improves overall system performance. It is widely used in situations where high efficiency and reliability are critical.
Equivalent
The FQPF4N90C is an N-channel MOSFET commonly used in power applications. Its equivalent products could include:
1. IRF740 (International Rectifier)
2. STP4N90K3 (STMicroelectronics)
3. IXTF4N90 (IXYS)
4. 2SK3568 (Toshiba)
5. NTE2397 (NTE Electronics)
It's important to verify the specifications, such as voltage, current ratings, and package type, to ensure compatibility with your specific application.
1. IRF740 (International Rectifier)
2. STP4N90K3 (STMicroelectronics)
3. IXTF4N90 (IXYS)
4. 2SK3568 (Toshiba)
5. NTE2397 (NTE Electronics)
It's important to verify the specifications, such as voltage, current ratings, and package type, to ensure compatibility with your specific application.
Features
The FQPF4N90C is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. Key features of this MOSFET include:
1. Voltage Rating: It has a high drain-source voltage rating, typically around 900V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current is usually around 4A, allowing it to handle moderate power levels.
3. RDS(on): The on-resistance is relatively low, which helps in improving efficiency by reducing power loss during operation.
4. Package Type: It is often available in a TO-220F package, which provides good thermal performance and is easy to mount on PCBs.
5. Application: Commonly used in power supply circuits, motor drivers, lighting, and other applications requiring efficient switching at high voltages.
6. Efficiency: With its low on-resistance and capability to handle significant voltage and current, it is effective in enhancing the overall efficiency of power electronic circuits.
These features make the FQPF4N90C a versatile component for various electronic devices, especially where high voltage and efficient switching are required.
1. Voltage Rating: It has a high drain-source voltage rating, typically around 900V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current is usually around 4A, allowing it to handle moderate power levels.
3. RDS(on): The on-resistance is relatively low, which helps in improving efficiency by reducing power loss during operation.
4. Package Type: It is often available in a TO-220F package, which provides good thermal performance and is easy to mount on PCBs.
5. Application: Commonly used in power supply circuits, motor drivers, lighting, and other applications requiring efficient switching at high voltages.
6. Efficiency: With its low on-resistance and capability to handle significant voltage and current, it is effective in enhancing the overall efficiency of power electronic circuits.
These features make the FQPF4N90C a versatile component for various electronic devices, especially where high voltage and efficient switching are required.
Pinout
The FQPF4N90C is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It typically comes in a TO-220F package, which has 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the 'on' state. It is connected to the load that the MOSFET is controlling.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is typically connected to the ground or the negative side of the power supply.
The FQPF4N90C is designed for high voltage and high-speed switching applications, with a breakdown voltage of 900V and a current rating of 4A. It is commonly used in power supply applications, high-voltage DC-DC converters, and other circuits requiring efficient high-speed switching capabilities.
1. Gate (G): This pin is used to control the MOSFET's conduction state. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Drain (D): This pin is where the main current flows out of the MOSFET when it is in the 'on' state. It is connected to the load that the MOSFET is controlling.
3. Source (S): This pin is the return path for the current flowing through the MOSFET. It is typically connected to the ground or the negative side of the power supply.
The FQPF4N90C is designed for high voltage and high-speed switching applications, with a breakdown voltage of 900V and a current rating of 4A. It is commonly used in power supply applications, high-voltage DC-DC converters, and other circuits requiring efficient high-speed switching capabilities.
Manufacturer
The FQPF4N90C is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a semiconductor company that focuses on designing, manufacturing, and supplying a broad range of semiconductor components. Their products include power and signal management, logic, discrete, and custom devices for various markets such as automotive, industrial, computing, consumer electronics, and communications. The company aims to provide energy-efficient and environmentally-friendly solutions across these industries.
Application
The FQPF4N90C is an N-channel MOSFET known for its high voltage and fast switching capabilities. It is commonly used in applications such as power supplies, including switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS). Additionally, it is suitable for use in high-voltage DC-DC converters, motor control systems, and industrial equipment requiring efficient power management. Its robust design also makes it a good choice for lighting systems, such as LED drivers, and in various consumer electronics where efficient power conversion is crucial.
Package
The FQPF4N90C is a MOSFET transistor packaged in a TO-220F type, which is a fully encapsulated, insulated package. This package type provides good thermal performance and electrical insulation, making it suitable for power applications that require efficient heat dissipation while maintaining electrical isolation.
