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FQPF8N60C
+BOMMOSFET N-CH 600V 7.5A TO220F
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Manufactureronsemi
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Mfr. Part #FQPF8N60C
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Datasheet FQPF8N60C DataSheet
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In Stock5565
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Specifications
| Attribute | Value |
| Series | QFET® |
| PartStatus | Obsolete |
| BaseProductNumber | FQPF8 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 7.5A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.2Ohm @ 3.75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 36 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 1255 pF @ 25 V |
| PowerDissipation(Max) | 48W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220F-3 |
| Package | TO-220-3 Full Pack |
| Packaging | Tube |
Overview
Description
The FQPF8N60C is an N-channel MOSFET from ON Semiconductor, designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Handling: 8A continuous drain current (ID).
- Low On-Resistance: 1.2Ω (typical) for reduced conduction losses.
- Fast Switching: Optimized for efficiency in power supplies, inverters, and motor control.
- Package: TO-220F (fully insulated) for easy mounting and thermal management.
Applications include switch-mode power supplies (SMPS), lighting ballasts, and industrial systems. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Handling: 8A continuous drain current (ID).
- Low On-Resistance: 1.2Ω (typical) for reduced conduction losses.
- Fast Switching: Optimized for efficiency in power supplies, inverters, and motor control.
- Package: TO-220F (fully insulated) for easy mounting and thermal management.
Applications include switch-mode power supplies (SMPS), lighting ballasts, and industrial systems. Its robust design ensures reliability in demanding environments.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the FQPF8N60C (N-channel MOSFET, 600V, 8A) include:
- STP8N60 (STMicroelectronics)
- IRF840 (Infineon)
- 2SK2837 (Toshiba)
- FQP8N60C (Fairchild, same series)
- IXFH8N60P (IXYS)
Check datasheets for exact compatibility in your circuit.
- STP8N60 (STMicroelectronics)
- IRF840 (Infineon)
- 2SK2837 (Toshiba)
- FQP8N60C (Fairchild, same series)
- IXFH8N60P (IXYS)
Check datasheets for exact compatibility in your circuit.
Features
The FQPF8N60C is an N-channel MOSFET with the following key features:
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Rating: 8A continuous drain current (ID).
- Low On-Resistance: 1.2Ω (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss) for efficient high-frequency operation.
- Avalanche Energy Rated: Improved ruggedness in inductive load applications.
- Low Gate Drive: 10V threshold (VGS(th)), compatible with standard logic levels.
- Package: TO-220F (fully insulated), enhancing thermal performance and safety.
Ideal for switching power supplies, motor control, and inverters due to its high voltage tolerance and efficiency.
- Voltage Rating: 600V drain-source voltage (VDSS).
- Current Rating: 8A continuous drain current (ID).
- Low On-Resistance: 1.2Ω (max) at VGS = 10V, reducing conduction losses.
- Fast Switching: Low gate charge (Qg) and input capacitance (Ciss) for efficient high-frequency operation.
- Avalanche Energy Rated: Improved ruggedness in inductive load applications.
- Low Gate Drive: 10V threshold (VGS(th)), compatible with standard logic levels.
- Package: TO-220F (fully insulated), enhancing thermal performance and safety.
Ideal for switching power supplies, motor control, and inverters due to its high voltage tolerance and efficiency.
Pinout
The FQPF8N60C is an N-channel MOSFET in an FQP (TO-220F) package with 3 pins:
1. Gate (G): Controls the switching operation (voltage applied here turns the device on/off).
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference connection.
Key Specifications:
- 600V drain-source voltage (VDS).
- 8A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient power handling.
Typical Applications:
- Power supplies, inverters, motor control.
- High-voltage switching circuits.
The TO-220F package is lead-free and suitable for through-hole mounting with a thermal pad for heat dissipation.
1. Gate (G): Controls the switching operation (voltage applied here turns the device on/off).
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground/reference connection.
Key Specifications:
- 600V drain-source voltage (VDS).
- 8A continuous drain current (ID).
- Low on-resistance (RDS(on)) for efficient power handling.
Typical Applications:
- Power supplies, inverters, motor control.
- High-voltage switching circuits.
The TO-220F package is lead-free and suitable for through-hole mounting with a thermal pad for heat dissipation.
Manufacturer
The FQPF8N60C is an N-channel MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor after its acquisition in 2016).
Fairchild Semiconductor was a pioneering American semiconductor company known for power management, analog, and discrete components. ON Semiconductor continues producing Fairchild's legacy products, focusing on energy-efficient solutions for automotive, industrial, and consumer markets.
The FQPF8N60C is a 600V, 8A MOSFET designed for high-voltage switching applications.
Fairchild Semiconductor was a pioneering American semiconductor company known for power management, analog, and discrete components. ON Semiconductor continues producing Fairchild's legacy products, focusing on energy-efficient solutions for automotive, industrial, and consumer markets.
The FQPF8N60C is a 600V, 8A MOSFET designed for high-voltage switching applications.
Application
The FQPF8N60C is an N-channel MOSFET commonly used in:
1. Power Supplies – Switched-mode power supplies (SMPS), AC-DC converters.
2. Motor Control – Driving small motors in appliances and industrial systems.
3. Lighting – LED drivers and ballast control.
4. DC-DC Converters – Voltage regulation in automotive and telecom applications.
5. General Switching – High-efficiency switching circuits in consumer electronics.
With a 600V drain-source voltage and low on-resistance, it suits medium-power applications requiring reliability and efficiency.
1. Power Supplies – Switched-mode power supplies (SMPS), AC-DC converters.
2. Motor Control – Driving small motors in appliances and industrial systems.
3. Lighting – LED drivers and ballast control.
4. DC-DC Converters – Voltage regulation in automotive and telecom applications.
5. General Switching – High-efficiency switching circuits in consumer electronics.
With a 600V drain-source voltage and low on-resistance, it suits medium-power applications requiring reliability and efficiency.
Package
The FQPF8N60C is an N-channel MOSFET in a TO-220F package. This package type features a fully insulated (isolated) design, making it suitable for applications requiring electrical isolation between the device and heatsink. The TO-220F package is robust, easy to mount, and provides good thermal performance.
