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FQT7N10LTF
+BOMPOWER FIELD-EFFECT TRANSISTOR, 1
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ManufacturerFairchild Semiconductor
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Mfr. Part #FQT7N10LTF
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Datasheet FQT7N10LTF DataSheet
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Package SOT-223-4
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In Stock5691
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Specifications
| Attribute | Value |
| Package | Bulk |
| Series | QFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 1.7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V, 10V |
| RdsOn(Max)@IdVgs | 350mOhm @ 850mA, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 6 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 290 pF @ 25 V |
| PowerDissipation(Max) | 2W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-4 |
Overview
Description
The FQT7N10LTF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used for electronic switching and amplification. It is part of Fairchild Semiconductor's product lineup, now under ON Semiconductor. This component is designed to handle medium power applications and is commonly found in consumer electronics, automotive systems, and industrial equipment.
Key features of the FQT7N10LTF include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of around 7A, suitable for moderate power applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency.
3. Package Type: It is available in a TO-252 package, which is compact and allows for efficient heat dissipation.
4. Applications: It is used in power management, motor control, DC-DC converters, and load switches.
This MOSFET is popular for its balance of performance, size, and cost-effectiveness in various electronic circuit designs.
Key features of the FQT7N10LTF include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of around 7A, suitable for moderate power applications.
2. Low On-Resistance: The MOSFET has a low on-state resistance (R_DS(on)), which minimizes power loss and improves efficiency.
3. Package Type: It is available in a TO-252 package, which is compact and allows for efficient heat dissipation.
4. Applications: It is used in power management, motor control, DC-DC converters, and load switches.
This MOSFET is popular for its balance of performance, size, and cost-effectiveness in various electronic circuit designs.
Equivalent
The FQT7N10LTF is an N-channel MOSFET. Equivalent products include:
1. IRF710 by Infineon Technologies
2. RFP7N10 by ON Semiconductor
3. STP10NK60Z by STMicroelectronics
These alternatives have similar voltage and current ratings but may differ slightly in specifications. Always check the datasheets to ensure compatibility with your application.
1. IRF710 by Infineon Technologies
2. RFP7N10 by ON Semiconductor
3. STP10NK60Z by STMicroelectronics
These alternatives have similar voltage and current ratings but may differ slightly in specifications. Always check the datasheets to ensure compatibility with your application.
Features
The FQT7N10LTF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications. Here are its key features:
1. Voltage and Current Ratings: It typically features a drain-source voltage (V_DS) of around 100V and a continuous drain current (I_D) of approximately 7A, making it suitable for moderate power applications.
2. Low On-Resistance: The device offers a low R_DS(on), which ensures efficient operation with minimal power loss, crucial for reducing heat generation and improving energy efficiency.
3. Fast Switching Speed: The FQT7N10LTF is designed for fast switching, which enhances performance in high-frequency applications.
4. Compact Package: It is often available in a compact TO-220 or similar package, which facilitates easy integration into circuits and systems.
5. Thermal Performance: It typically includes features for good thermal performance, helping to maintain stability and reliability under varying temperatures.
6. Applications: Commonly used in power supplies, motor controllers, and other applications requiring efficient switching and power handling.
1. Voltage and Current Ratings: It typically features a drain-source voltage (V_DS) of around 100V and a continuous drain current (I_D) of approximately 7A, making it suitable for moderate power applications.
2. Low On-Resistance: The device offers a low R_DS(on), which ensures efficient operation with minimal power loss, crucial for reducing heat generation and improving energy efficiency.
3. Fast Switching Speed: The FQT7N10LTF is designed for fast switching, which enhances performance in high-frequency applications.
4. Compact Package: It is often available in a compact TO-220 or similar package, which facilitates easy integration into circuits and systems.
5. Thermal Performance: It typically includes features for good thermal performance, helping to maintain stability and reliability under varying temperatures.
6. Applications: Commonly used in power supplies, motor controllers, and other applications requiring efficient switching and power handling.
Pinout
The FQT7N10LTF is a N-channel MOSFET. It typically comes in a TO-252 package, which generally has a 3-pin configuration. The pin count and functions are as follows:
1. Gate (G): This is the control pin. Applying a voltage to the gate will allow current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET from the load.
3. Source (S): This terminal is where the current exits the MOSFET to the ground or return path.
Additionally, the package includes a tab connected to the drain, which aids in heat dissipation. This MOSFET is used for switching applications and can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of about 7A, making it suitable for medium power applications. Always refer to the specific datasheet for precise electrical characteristics and pin configurations.
1. Gate (G): This is the control pin. Applying a voltage to the gate will allow current to flow between the drain and source.
2. Drain (D): This is the terminal where the current enters the MOSFET from the load.
3. Source (S): This terminal is where the current exits the MOSFET to the ground or return path.
Additionally, the package includes a tab connected to the drain, which aids in heat dissipation. This MOSFET is used for switching applications and can handle a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of about 7A, making it suitable for medium power applications. Always refer to the specific datasheet for precise electrical characteristics and pin configurations.
Manufacturer
The FQT7N10LTF is manufactured by ON Semiconductor. ON Semiconductor is a leading supplier of semiconductor-based solutions, offering a comprehensive portfolio of energy-efficient solutions for various applications, including automotive, industrial, cloud power, and Internet of Things (IoT). The company provides a wide range of products such as power management, analog, sensors, logic, timing, connectivity, and discrete devices. ON Semiconductor focuses on designing and manufacturing components that help customers reduce energy usage, and improve efficiency and performance, while also enabling innovation across different technology sectors.
Application
The FQT7N10LTF is an N-channel MOSFET commonly used in various electronic applications. Its key areas include power management systems, motor drives, and DC-DC converters due to its efficient switching performance. It's suitable for load switching in battery-powered devices, enhancing energy efficiency. Additionally, it can be used in power supply circuits and LED drivers, where low on-resistance and fast switching are crucial. Its compact size also makes it ideal for space-constrained applications like portable electronics. Overall, the FQT7N10LTF is versatile for applications requiring reliable and efficient power control.
Package
The FQT7N10LTF is a MOSFET transistor, and its package type is TO-220F. The TO-220F package is a fully isolated version of the TO-220, providing electrical isolation between the semiconductor and the heat sink.
