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G1002L
+BOMN100V,RD(MAX)<250M@10V,VTH1.2V~2
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ManufacturerGoford Semiconductor
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Mfr. Part #G1002L
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In Stock5096
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Specifications
| Attribute | Value |
| Supplier | Goford Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 2A |
| Rds On(Max) @ Id Vgs | 250mOhm @ 2A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 10 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 413 pF @ 50 V |
| Power Dissipation (Max) | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3L |
