G23N06K

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G23N06K

+BOM

N60V,RD(MAX)<35M@10V,RD(MAX)<45M

  • ManufacturerGoford Semiconductor

  • Mfr. Part #G23N06K

  • In Stock5260

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Specifications

Attribute Value
Supplier Goford Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 23A
Rds On(Max) @ Id Vgs 35mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 25 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 590 pF @ 15 V
Power Dissipation (Max) 38W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252 (DPAK)