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G3R12MT12K
+BOM1200V 12M TO-247-4 G3R SIC MOSFE
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #G3R12MT12K
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In Stock38
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain(Id) @ 25°C | 157A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 15V, 18V |
| Rds On(Max) @ Id Vgs | 13mOhm @ 100A, 18V |
| Vgs(th)(Max) @ Id | 2.7V @ 50mA |
| Gate Charge(Qg)(Max) @ Vgs | 288 nC @ 15 V |
| Vgs(Max) | +22V, -10V |
| Input Capacitance(Ciss)(Max) @ Vds | 9335 pF @ 800 V |
| Power Dissipation (Max) | 567W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
