G3S12004B

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G3S12004B

+BOM

SIC SCHOTTKY DIODE 1200V 4A 3-PI

  • ManufacturerGlobal Power Technology-GPT

  • Mfr. Part #G3S12004B

  • Package TO-247-3

  • In Stock8675

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Specifications

Attribute Value
Supplier Global Power Technology-GPT
Package Cut Tape (CT),Tape & Box (TB)
ProductStatus Active
DiodeConfiguration 1 Pair Common Cathode
DiodeType Silicon Carbide Schottky
Voltage-DCReverse(Vr)(Max) 1200 V
Current-AverageRectified(Io)(perDiode) 8.5A (DC)
Voltage-Forward(Vf)(Max)@If 1.7 V @ 2 A
Speed No Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr) 0 ns
Current-ReverseLeakage@Vr 50 µA @ 1200 V
OperatingTemperature-Junction -55°C ~ 175°C
MountingType Through Hole
Package/Case TO-247-3

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