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G3S12010BM
+BOMSIC SCHOTTKY DIODE 1200V 10A 3-P
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ManufacturerGlobal Power Technology Co. Ltd
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Mfr. Part #G3S12010BM
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Datasheet G3S12010BM DataSheet
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Package TO-247-3
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In Stock7625
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Specifications
| Attribute | Value |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io)(per Diode) | 19.8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
