G3S12010C

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G3S12010C

+BOM

SIC SCHOTTKY DIODE 1200V 10A 2-P

  • ManufacturerGlobal Power Technology-GPT

  • Mfr. Part #G3S12010C

  • Package TO-252-3

  • In Stock5702

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Specifications

Attribute Value
Supplier Global Power Technology-GPT
Package Cut Tape (CT),Tape & Box (TB)
ProductStatus Active
DiodeType Silicon Carbide Schottky
Voltage-DCReverse(Vr)(Max) 1200 V
Current-AverageRectified(Io) 33.2A (DC)
Voltage-Forward(Vf)(Max)@If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
ReverseRecoveryTime(trr) 0 ns
Current-ReverseLeakage@Vr 50 µA @ 1200 V
Capacitance@VrF 765pF @ 0V, 1MHz
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63
SupplierDevicePackage TO-252

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