G3S12010H

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G3S12010H

+BOM

SIC SCHOTTKY DIODE 1200V 10A 2-P

  • ManufacturerGlobal Power Technology-GPT

  • Mfr. Part #G3S12010H

  • Package TO-220-2

  • In Stock3028

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Specifications

Attribute Value
Supplier Global Power Technology-GPT
Package / Case Cut Tape (CT),Tape & Box (TB)
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified(Io) 16.5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Capacitance @ Vr F 765pF @ 0V, 1MHz
Mounting Type Through Hole
Supplier Device Package TO-220F

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