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G4S06508JT
+BOMSIC SCHOTTKY DIODE 650V 8A 2-PIN
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ManufacturerGlobal Power Technology-GPT
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Mfr. Part #G4S06508JT
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Datasheet G4S06508JT DataSheet
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Package TO-220-2
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In Stock5474
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Specifications
| Attribute | Value |
| Supplier | Global Power Technology-GPT |
| Package / Case | Cut Tape (CT),Tape & Box (TB) |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 23.5A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr F | 395pF @ 0V, 1MHz |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220ISO |
