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G5S12008C
+BOMSIC SCHOTTKY DIODE 1200V 8A 2-PI
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ManufacturerGlobal Power Technology Co. Ltd
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Mfr. Part #G5S12008C
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Datasheet G5S12008C DataSheet
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Package TO-252-3
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In Stock8063
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Specifications
| Attribute | Value |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 28.9A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr F | 550pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
