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G5S6504Z
+BOMSIC SCHOTTKY DIODE 650V 4A DFN5
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ManufacturerGlobal Power Technology Co. Ltd
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Mfr. Part #G5S6504Z
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Datasheet G5S6504Z DataSheet
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Package TDFN-8
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In Stock9518
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Specifications
| Attribute | Value |
| Supplier | Global Power Technology Co. Ltd |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io) | 15.45A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr F | 181pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFN (4.9x5.75) |
