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GB05SLT12-252
+BOMDIODE SILICON 1.2KV 5A TO252
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #GB05SLT12-252
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Datasheet GB05SLT12-252 DataSheet
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Package TO-252-3
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In Stock9927
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 2 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr F | 260pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
