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GD25LD40CEIGR
+BOMIC FLSH 4MBIT SPI/DUAL I/O 8USON
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ManufacturerGigaDevice Semiconductor (HK) Limited
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Mfr. Part #GD25LD40CEIGR
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In Stock3103
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Specifications
| Attribute | Value |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 4Mbit |
| Memory Organization | 512K x 8 |
| Memory Interface | SPI - Dual I/O |
| Clock Frequency | 50 MHz |
| Write Cycle Time - Word, Page | 97µs, 6ms |
| Voltage - Supply | 1.65V ~ 2V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-XFDFN Exposed Pad |
| Supplier Device Package | 8-USON (2x3) |
| Base Product Number | GD25LD40 |
Overview
Description
Key features include support for dual and quad SPI modes, allowing increased data transfer rates, and it is designed to efficiently execute erase, program, and read operations. The GD25LD40CEIGR is commonly used in consumer electronics, automotive, and industrial applications for code storage, firmware updates, and more due to its reliability and flexibility. The package comes in a compact 8-pin SOIC, facilitating easy integration into designs. Overall, it is ideal for applications that require non-volatile memory with high-speed access, low power consumption, and robust performance.
Equivalent
1. Winbond W25Q40BV
2. Micron MT25QL040A
3. Spansion S25FL040A
4. Cypress S25FL040K
These alternatives provide similar specifications regarding capacity, voltage, and interfaces, making them suitable replacements in most applications. Always check the datasheets for compatibility.
Features
1. Interface: It supports a quad SPI (Serial Peripheral Interface) protocol for high-speed data transfer.
2. Operating Voltage: The device operates at a voltage range of 2.7V to 3.6V.
3. Speed: It offers up to 104 MHz clock frequency for efficient data access.
4. Memory Organization: The memory is organized into 256 sectors of 64 Kbits each, allowing for flexible data management.
5. Erase and Programming: Supports sector erase, bulk erase, and page programming capabilities.
6. Endurance: The device has a typical endurance of 100,000 program/erase cycles per sector.
7. Data Retention: Offers a data retention period of up to 20 years.
8. Package Options: Available in various package types, including SOIC and WSON.
These features make the GD25LD40CEIGR suitable for applications in consumer electronics, automotive, and industrial sectors.
Pinout
1. CS (Chip Select): Active low input for selecting the device.
2. SO (Serial Output): Output pin for data.
3. SI (Serial Input): Input pin for data.
4. SCK (Serial Clock): Clock input pin for synchronizing data transfer.
5. GND (Ground): Power ground pin.
6. VCC (Power Supply): Supply voltage pin, typically 2.7V to 3.6V.
7. WP (Write Protect): Input pin to protect memory from write operations (active high).
8. HOLD: Input pin to pause the serial communication (active low).
This device supports various serial communication protocols, including SPI, and is used in various applications requiring non-volatile memory.
Manufacturer
The GD25LD40CEIGR is a 4 Megabit (512 K x 8) Serial NOR Flash memory device, primarily used for code storage and execution in embedded systems. GigaDevice emphasizes high performance, reliability, and low power consumption in its product offerings, catering to the growing demand for memory solutions in the rapidly evolving tech landscape. The company operates in a competitive semiconductor market and seeks to provide advanced memory technologies to meet the needs of its diverse clientele.