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GD25Q16EEIGR
+BOM16MBIT NOR FLASH /3.3V /WSON 3*2
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ManufacturerGigaDevice Semiconductor (HK) Limited
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Mfr. Part #GD25Q16EEIGR
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Package 8-XFDFN Exposed Pad
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In Stock6651
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Specifications
| Attribute | Value |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 16Mb (2M x 8) |
| MemoryInterface | SPI - Quad I/O |
| ClockFrequency | 133 MHz |
| WriteCycleTime-WordPage | 70µs, 2ms |
| AccessTime | 7 ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 8-XFDFN Exposed Pad |
Overview
Description
Key features of the GD25Q16EEIGR include high performance with fast read and write operations, and support for dual and quad I/O modes, which enhance data transfer speeds. It operates over a wide voltage range, typically from 2.7V to 3.6V, making it versatile for different electronic environments. The device is commonly used in consumer electronics, industrial systems, and IoT devices due to its reliability and efficiency.
The GD25Q16EEIGR is housed in an 8-pin package, often using the SOP8 format, which is compact and easy to integrate into various designs. With its balance of performance, capacity, and cost-effectiveness, it is a popular choice for designers looking to implement flash memory in their projects.
Equivalent
1. Winbond W25Q16JV
2. Microchip AT25SF161
3. Macronix MX25L1606E
4. Cypress (now Infineon) S25FL116K
5. ISSI IS25LP016D
These chips have similar memory capacities and are often used interchangeably in applications like microcontroller storage, boot ROMs, and other embedded systems. Always verify pin compatibility and electrical specifications before substituting.
Features
1. Capacity: 16 Mbit (2MB).
2. Interface: Supports SPI (Serial Peripheral Interface) for communication.
3. Clock Speed: Operates up to 104 MHz, enabling fast data transfer rates.
4. Voltage Range: Operates at a wide voltage range of 2.7V to 3.6V, suitable for various applications.
5. Architecture: Organized as 2,097,152 bytes with 4KB sectors, 32KB and 64KB blocks.
6. Endurance and Retention: Offers over 100,000 program/erase cycles and 20-year data retention.
7. Security: Provides features like block protection and a locked OTP (One-Time Programmable) area for security.
8. Temperature Range: Operates within an industrial temperature range of -40°C to +85°C.
9. Package: Available in an 8-pin SOP (Small Outline Package), which is easy to integrate into various designs.
These features make the GD25Q16EEIGR suitable for embedded systems, consumer electronics, and IoT applications requiring reliable and efficient memory solutions.
Pinout
1. CS# (Chip Select): Activates the device when pulled low.
2. SO/SIO1 (Serial Data Output/IO): Used for data output in SPI mode.
3. WP# (Write Protect): Hardware write protection; active low.
4. GND (Ground): Power supply ground.
5. SI/SIO0 (Serial Data Input/IO): Used for data input in SPI mode.
6. SCK (Serial Clock): Provides the clock signal for data transfer.
7. HOLD# (Hold): Pauses the serial communication; active low.
8. VCC (Power Supply): Power supply input.
This SPI-based flash memory is used in various applications for storage purposes, including embedded systems and consumer electronics. The device supports standard SPI modes and provides high-performance, low-power operation.