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GD2X60MPS06N
+BOM650V 120A SOT-227 SIC SCHOTTKY
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ManufacturerGeneSiC Semiconductor
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Mfr. Part #GD2X60MPS06N
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Datasheet GD2X60MPS06N DataSheet
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Package SOT-227-4
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In Stock300
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Specifications
| Attribute | Value |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Tube |
| Series | SiC Schottky MPS™ |
| Part Status | Active |
| Diode Configuration | 2 Independent |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified(Io)(per Diode) | 70A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
