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GP2T080A120H
+BOMSIC MOSFET 1200V 80M TO-247-4L
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ManufacturerSemiQ
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Mfr. Part #GP2T080A120H
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In Stock80
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Specifications
| Attribute | Value |
| Supplier | SemiQ |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 100mOhm @ 20A, 20V |
| Vgs(th)(Max)@Id | 4V @ 10mA |
| GateCharge(Qg)(Max)@Vgs | 61 nC @ 20 V |
| Vgs(Max) | +25V, -10V |
| InputCapacitance(Ciss)(Max)@Vds | 1377 pF @ 1000 V |
| PowerDissipation(Max) | 188W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4 |
