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GT105N10F
+BOMN100V,RD(MAX)<10.5M@10V,RD(MAX)<
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ManufacturerGoford Semiconductor
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Mfr. Part #GT105N10F
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In Stock70
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Specifications
| Attribute | Value |
| Supplier | Goford Semiconductor |
| Package / Case | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 25A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 10.5mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 54 nC @ 10 V |
| Vgs(Max) | ±20V |
| Power Dissipation (Max) | 20.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220F |
