GT55N06D5

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GT55N06D5

+BOM

N60V,RD(MAX)<8M@10V,RD(MAX)<13M@

  • ManufacturerGoford Semiconductor

  • Mfr. Part #GT55N06D5

  • In Stock9786

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Specifications

Attribute Value
Supplier Goford Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 53A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 9mOhm @ 14A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 31 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1988 pF @ 30 V
Power Dissipation (Max) 70W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN (4.9x5.75)

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