Specifications
| Attribute | Value |
| Supplier | Toshiba Semiconductor and Storage |
| Package / Case | Tube |
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown(Max) | 1000 V |
| Current - Collector(Ic)(Max) | 60 A |
| Current - Collector Pulsed(Icm) | 120 A |
| Vce(on)(Max) @ Vge Ic | 2.8V @ 15V, 60A |
| Power - Max | 170 W |
| Input Type | Standard |
| Td(on / off) @ 25°C | 330ns/700ns |
| Reverse Recovery Time (trr) | 2.5 µs |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
